Projects per year
Abstract
The use of magnetic tunnel junction (MTJ)-based devices constitutes an important basis of modern spintronics. However, the switching layer of an MTJ is widely believed to be an unmodifiable setup, instead of a user-defined option, posing a restriction to the function of spintronic devices. In this study, we realized a reliable electrical control of the switching layer in perpendicular MTJs with 0.1 nm Ir dusting. Specifically, a voltage pulse with a higher amplitude drives the magnetization switching of the MTJ's bottom electrode, while a lower voltage amplitude switches its top electrode. We discussed the origin of this controllability and excluded the possibility of back-hopping. Given the established studies on enhancing the voltage-controlled magnetic anisotropy effect by adopting Ir, we attribute this switching behavior to the significant diffusion of Ir atoms into the top electrode, which is supported by scanning transmission electron microscopy with atomic resolution.
Original language | English (US) |
---|---|
Article number | 182401 |
Journal | Applied Physics Letters |
Volume | 124 |
Issue number | 18 |
DOIs | |
State | Published - Apr 29 2024 |
Bibliographical note
Publisher Copyright:© 2024 Author(s).
MRSEC Support
- Partial
Fingerprint
Dive into the research topics of 'Electrical control of the switching layer in perpendicular magnetic tunnel junctions with atomically thin Ir dusting'. Together they form a unique fingerprint.Projects
- 2 Active
-
-
University of Minnesota Materials Research Science and Engineering Center (DMR-2011401)
Leighton, C. (PI) & Lodge, T. (CoI)
THE NATIONAL SCIENCE FOUNDATION
9/1/20 → 8/31/26
Project: Research project