Electrical control of reversible and permanent magnetization reorientation for magnetoelectric memory devices

Tao Wu, Alexandre Bur, Kin Wong, Ping Zhao, Christopher S. Lynch, Pedram Khalili Amiri, Kang L. Wang, Gregory P. Carman

Research output: Contribution to journalArticlepeer-review

121 Scopus citations

Abstract

We report giant reversible and permanent magnetic anisotropy reorientation between two perpendicular easy axes in a magnetoelectric polycrystalline Ni thin film and (011) oriented [Pb(Mg1/3Nb2/3)O 3](1-x)-[PbTiO3]x (PMN-PT) heterostructure. The PMN-PT is partially poled prior to Ni film deposition to provide a remanent strain bias. Following Ni deposition and full poling of the sample, two giant remanent strains of equal and opposite values are used to reversibly and permanently reorient the magnetization state of the Ni film. These experimental results are integrated into micromagnetic simulation to demonstrate the usefulness of this approach for magnetoelectric based magnetic random access memory.

Original languageEnglish (US)
Article number262504
JournalApplied Physics Letters
Volume98
Issue number26
DOIs
StatePublished - Jun 27 2011

Bibliographical note

Funding Information:
This work was partially supported by the Air Force Office of Scientific Research (AFOSR) under Grant No. FA9550-09-1-0677 managed by Byung-Lip (Les) Lee, the Swiss National Science Foundation (SNF) under Grant No. PBNEP2-124323, and the DARPA Non-Volatile Magnonic Logic (NVL) Project under Contract No. HR0011-10-C-0153.

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