We report giant reversible and permanent magnetic anisotropy reorientation between two perpendicular easy axes in a magnetoelectric polycrystalline Ni thin film and (011) oriented [Pb(Mg1/3Nb2/3)O 3](1-x)-[PbTiO3]x (PMN-PT) heterostructure. The PMN-PT is partially poled prior to Ni film deposition to provide a remanent strain bias. Following Ni deposition and full poling of the sample, two giant remanent strains of equal and opposite values are used to reversibly and permanently reorient the magnetization state of the Ni film. These experimental results are integrated into micromagnetic simulation to demonstrate the usefulness of this approach for magnetoelectric based magnetic random access memory.
Bibliographical noteFunding Information:
This work was partially supported by the Air Force Office of Scientific Research (AFOSR) under Grant No. FA9550-09-1-0677 managed by Byung-Lip (Les) Lee, the Swiss National Science Foundation (SNF) under Grant No. PBNEP2-124323, and the DARPA Non-Volatile Magnonic Logic (NVL) Project under Contract No. HR0011-10-C-0153.