Electrical conduction and band offsets in Si/Hf xTi 1-xO 2/metal structures

V. V. Afanas'ev; A. Stesmans; F. Chen; M. Li; S. A. Campbell

doi:10.1063/1.1703821

Electrical conduction and band offsets in Si/Hf _xTi _1-xO ₂/metal structures

V. V. Afanas'ev
, A. Stesmans
, F. Chen
, M. Li
, S. A. Campbell

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

45 Scopus citations

Abstract

The interface barrier heights in the silicon MOS structures with Hf _xTi _1-xO ₂ insulator was determined using internal electron photoemission (IPE) spectroscopy. The composition of the films was estimated using the deposition rates of the component oxides. The IPE spectra measured in samples with different oxide composition under -1 V bias on the Au electrode were also compared. Crystallization of TiO ₂ upon high-temperature annealing further enhances leakage currents because of a significantly lower band-gap width of crystallized Ti ₂.

Original language	English (US)
Pages (from-to)	7936-7939
Number of pages	4
Journal	Journal of Applied Physics
Volume	95
Issue number	12
DOIs	https://doi.org/10.1063/1.1703821
State	Published - Jun 15 2004

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10.1063/1.1703821

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abstract = "The interface barrier heights in the silicon MOS structures with Hf xTi 1-xO 2 insulator was determined using internal electron photoemission (IPE) spectroscopy. The composition of the films was estimated using the deposition rates of the component oxides. The IPE spectra measured in samples with different oxide composition under -1 V bias on the Au electrode were also compared. Crystallization of TiO 2 upon high-temperature annealing further enhances leakage currents because of a significantly lower band-gap width of crystallized Ti 2.",

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AU - Afanas'ev, V. V.

AU - Stesmans, A.

AU - Chen, F.

AU - Li, M.

AU - Campbell, S. A.

PY - 2004/6/15

Y1 - 2004/6/15

N2 - The interface barrier heights in the silicon MOS structures with Hf xTi 1-xO 2 insulator was determined using internal electron photoemission (IPE) spectroscopy. The composition of the films was estimated using the deposition rates of the component oxides. The IPE spectra measured in samples with different oxide composition under -1 V bias on the Au electrode were also compared. Crystallization of TiO 2 upon high-temperature annealing further enhances leakage currents because of a significantly lower band-gap width of crystallized Ti 2.

AB - The interface barrier heights in the silicon MOS structures with Hf xTi 1-xO 2 insulator was determined using internal electron photoemission (IPE) spectroscopy. The composition of the films was estimated using the deposition rates of the component oxides. The IPE spectra measured in samples with different oxide composition under -1 V bias on the Au electrode were also compared. Crystallization of TiO 2 upon high-temperature annealing further enhances leakage currents because of a significantly lower band-gap width of crystallized Ti 2.

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U2 - 10.1063/1.1703821

DO - 10.1063/1.1703821

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EP - 7939

JO - Journal of Applied Physics

JF - Journal of Applied Physics

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ER -

Electrical conduction and band offsets in Si/Hf _xTi _1-xO ₂/metal structures

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