Electrical conduction and band offsets in Si/Hf xTi 1-xO 2/metal structures

V. V. Afanas'ev, A. Stesmans, F. Chen, M. Li, S. A. Campbell

Research output: Contribution to journalArticlepeer-review

45 Scopus citations


The interface barrier heights in the silicon MOS structures with Hf xTi 1-xO 2 insulator was determined using internal electron photoemission (IPE) spectroscopy. The composition of the films was estimated using the deposition rates of the component oxides. The IPE spectra measured in samples with different oxide composition under -1 V bias on the Au electrode were also compared. Crystallization of TiO 2 upon high-temperature annealing further enhances leakage currents because of a significantly lower band-gap width of crystallized Ti 2.

Original languageEnglish (US)
Pages (from-to)7936-7939
Number of pages4
JournalJournal of Applied Physics
Issue number12
StatePublished - Jun 15 2004


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