Abstract
The interface barrier heights in the silicon MOS structures with Hf xTi 1-xO 2 insulator was determined using internal electron photoemission (IPE) spectroscopy. The composition of the films was estimated using the deposition rates of the component oxides. The IPE spectra measured in samples with different oxide composition under -1 V bias on the Au electrode were also compared. Crystallization of TiO 2 upon high-temperature annealing further enhances leakage currents because of a significantly lower band-gap width of crystallized Ti 2.
Original language | English (US) |
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Pages (from-to) | 7936-7939 |
Number of pages | 4 |
Journal | Journal of Applied Physics |
Volume | 95 |
Issue number | 12 |
DOIs | |
State | Published - Jun 15 2004 |