Electrical characterization of metal/pentacene contacts

Lei Diao, C. Daniel Frisbie, Dominic D. Schroepfer, P. Paul Ruden

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Abstract

We report on the results of electrical characterization experiments on metal/pentacene contacts. The metals explored were gold, silver, and platinum. Two kinds of devices were fabricated and tested: symmetric metal/pentacene/metal structures and nonsymmetric metal/pentacene/indium-tin-oxide structures. The rectification ratio of the latter devices was found to depend strongly on the metal and ranged between 2 and 103 for applied voltages of ±1 V. Schottky barrier heights were extracted from the reverse current activation energy measurements over the temperature range of ∼240-340 K. Numerical device modeling using the experimentally determined Schottky barrier heights yielded results that are consistent with the experimental current-voltage characteristics, and indicated the presence of a non-negligible (trapped) positive space charge in the pentacene films.

Original languageEnglish (US)
Article number014510
JournalJournal of Applied Physics
Volume101
Issue number1
DOIs
StatePublished - Jan 24 2007

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