Abstract
We report on the results of electrical characterization experiments on metal/pentacene contacts. The metals explored were gold, silver, and platinum. Two kinds of devices were fabricated and tested: symmetric metal/pentacene/metal structures and nonsymmetric metal/pentacene/indium-tin-oxide structures. The rectification ratio of the latter devices was found to depend strongly on the metal and ranged between 2 and 103 for applied voltages of ±1 V. Schottky barrier heights were extracted from the reverse current activation energy measurements over the temperature range of ∼240-340 K. Numerical device modeling using the experimentally determined Schottky barrier heights yielded results that are consistent with the experimental current-voltage characteristics, and indicated the presence of a non-negligible (trapped) positive space charge in the pentacene films.
| Original language | English (US) |
|---|---|
| Article number | 014510 |
| Journal | Journal of Applied Physics |
| Volume | 101 |
| Issue number | 1 |
| DOIs | |
| State | Published - 2007 |
Bibliographical note
Funding Information:This work was supported primarily by the MRSEC Program of the National Science Foundation under Award No. DMR-0212302. The authors acknowledge the support of the Minnesota Supercomputing Institute for Digital Simulation and Advanced Computation.