Electrical characterization of 3D Through-Silicon-Vias

F. Liu, X. Gu, K. A. Jenkins, E. A. Cartier, Y. Liu, P. Song, S. J. Koester

Research output: Chapter in Book/Report/Conference proceedingConference contribution

17 Scopus citations

Abstract

A detailed study of Through-Silicon-Vias (TSV) electrical properties is presented. A basic test structure is a dual-TSV made of tungsten TSVs based on hybrid copper-adhesive wafer bonding. Three measurement techniques are utilized: low frequency TSV capacitance characterization using an LCR meter; inductance extraction from the reflection coefficient of TSV chains; TSV frequency dependent capacitance using transmission line characterization method. Experimental results are in agreement with simulation data for each of the techniques. Furthermore, eye diagram and RLC evaluation show the utility of the dual-TSV for high- performance 3DI system applications.

Original languageEnglish (US)
Title of host publication2010 Proceedings 60th Electronic Components and Technology Conference, ECTC 2010
Pages1100-1105
Number of pages6
DOIs
StatePublished - Aug 9 2010
Event60th Electronic Components and Technology Conference, ECTC 2010 - Las Vegas, NV, United States
Duration: Jun 1 2010Jun 4 2010

Other

Other60th Electronic Components and Technology Conference, ECTC 2010
CountryUnited States
CityLas Vegas, NV
Period6/1/106/4/10

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