Abstract
A short, elementary introduction into the physics of n-i-p-i doping superlattices is presented. Their electrical and optical properties which result from the unique tunability of their bandstructures are discussed. Examples of GaAs based n-i-p-i and hetero-n-i-p-i superlattices illustrate the novel phenomena that have been predicted and experimentally observed. The device potential of these engineered semiconductor materials is also discussed.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 36-44 |
| Number of pages | 9 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 792 |
| DOIs | |
| State | Published - Aug 11 1987 |