Electrical and optical properties of semiconductor doping superlattices

P. Paul Ruden

Research output: Contribution to journalArticlepeer-review

Abstract

A short, elementary introduction into the physics of n-i-p-i doping superlattices is presented. Their electrical and optical properties which result from the unique tunability of their bandstructures are discussed. Examples of GaAs based n-i-p-i and hetero-n-i-p-i superlattices illustrate the novel phenomena that have been predicted and experimentally observed. The device potential of these engineered semiconductor materials is also discussed.

Original languageEnglish (US)
Pages (from-to)36-44
Number of pages9
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume792
DOIs
StatePublished - Aug 11 1987

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