Electrical and noise characteristics of fin-shaped GaN/AlGaN devices for high frequency operation

P. Sai; D. B. But; M. Dub; M. Sakowicz; B. Grzywacz; P. Prystawko; G. Cywinski; W. Knap; S. Rumyantsev

doi:10.1109/ESSDERC.2019.8901702

Electrical and noise characteristics of fin-shaped GaN/AlGaN devices for high frequency operation

P. Sai, D. B. But, M. Dub, M. Sakowicz, B. Grzywacz, P. Prystawko, G. Cywinski, W. Knap, S. Rumyantsev

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Scopus citations

Abstract

GaN/AlGaN lateral Schottky diodes, FinFETs and EdgeFETs were fabricated and studied. All these devices have fin-shaped active area, characterized by small input capacitance and are promising for high frequency applications.

Original language	English (US)
Title of host publication	49th European Solid-State Device Research Conference, ESSDERC 2019
Publisher	Editions Frontieres
Pages	90-93
Number of pages	4
ISBN (Electronic)	9781728115399
DOIs	https://doi.org/10.1109/ESSDERC.2019.8901702
State	Published - Sep 2019
Externally published	Yes
Event	49th European Solid-State Device Research Conference, ESSDERC 2019 - Cracow, Poland Duration: Sep 23 2019 → Sep 26 2019

Publication series

Name	European Solid-State Device Research Conference
Volume	2019-September
ISSN (Print)	1930-8876

Conference

Conference	49th European Solid-State Device Research Conference, ESSDERC 2019
Country/Territory	Poland
City	Cracow
Period	9/23/19 → 9/26/19

Bibliographical note

Funding Information:
The work at CENTERA was supported by the Center for Terahertz Research and Applications project carried out within the International Research Agendas program of the Foundation for Polish Science co-financed by the European Union under the European Regional Development Fund, by the Foundation for Polish Science through the grant TEAM/2016-3/25 and by the National Science Centre, Poland allocated on the basis of the decisions No. UMO-2017/25/N/ST3/00408 and No. UMO-2017/27/L/ST7/03283

Publisher Copyright:
© 2019 IEEE.

Keywords

EdgeFET
FinFET
lateral Schottky diode

Publisher link

10.1109/ESSDERC.2019.8901702

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Sai, P., But, D. B., Dub, M., Sakowicz, M., Grzywacz, B., Prystawko, P., Cywinski, G., Knap, W., & Rumyantsev, S. (2019). Electrical and noise characteristics of fin-shaped GaN/AlGaN devices for high frequency operation. In 49th European Solid-State Device Research Conference, ESSDERC 2019 (pp. 90-93). Article 8901702 (European Solid-State Device Research Conference; Vol. 2019-September). Editions Frontieres. https://doi.org/10.1109/ESSDERC.2019.8901702

Electrical and noise characteristics of fin-shaped GaN/AlGaN devices for high frequency operation. / Sai, P.; But, D. B.; Dub, M. et al.
49th European Solid-State Device Research Conference, ESSDERC 2019. Editions Frontieres, 2019. p. 90-93 8901702 (European Solid-State Device Research Conference; Vol. 2019-September).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Sai, P, But, DB, Dub, M, Sakowicz, M, Grzywacz, B, Prystawko, P, Cywinski, G, Knap, W & Rumyantsev, S 2019, Electrical and noise characteristics of fin-shaped GaN/AlGaN devices for high frequency operation. in 49th European Solid-State Device Research Conference, ESSDERC 2019., 8901702, European Solid-State Device Research Conference, vol. 2019-September, Editions Frontieres, pp. 90-93, 49th European Solid-State Device Research Conference, ESSDERC 2019, Cracow, Poland, 9/23/19. https://doi.org/10.1109/ESSDERC.2019.8901702

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title = "Electrical and noise characteristics of fin-shaped GaN/AlGaN devices for high frequency operation",

abstract = "GaN/AlGaN lateral Schottky diodes, FinFETs and EdgeFETs were fabricated and studied. All these devices have fin-shaped active area, characterized by small input capacitance and are promising for high frequency applications.",

keywords = "EdgeFET, FinFET, lateral Schottky diode",

author = "P. Sai and But, \{D. B.\} and M. Dub and M. Sakowicz and B. Grzywacz and P. Prystawko and G. Cywinski and W. Knap and S. Rumyantsev",

note = "Funding Information: The work at CENTERA was supported by the Center for Terahertz Research and Applications project carried out within the International Research Agendas program of the Foundation for Polish Science co-financed by the European Union under the European Regional Development Fund, by the Foundation for Polish Science through the grant TEAM/2016-3/25 and by the National Science Centre, Poland allocated on the basis of the decisions No. UMO-2017/25/N/ST3/00408 and No. UMO-2017/27/L/ST7/03283 Publisher Copyright: {\textcopyright} 2019 IEEE.; 49th European Solid-State Device Research Conference, ESSDERC 2019 ; Conference date: 23-09-2019 Through 26-09-2019",

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doi = "10.1109/ESSDERC.2019.8901702",

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AU - Sai, P.

AU - But, D. B.

AU - Dub, M.

AU - Sakowicz, M.

AU - Grzywacz, B.

AU - Prystawko, P.

AU - Cywinski, G.

AU - Knap, W.

AU - Rumyantsev, S.

N1 - Funding Information: The work at CENTERA was supported by the Center for Terahertz Research and Applications project carried out within the International Research Agendas program of the Foundation for Polish Science co-financed by the European Union under the European Regional Development Fund, by the Foundation for Polish Science through the grant TEAM/2016-3/25 and by the National Science Centre, Poland allocated on the basis of the decisions No. UMO-2017/25/N/ST3/00408 and No. UMO-2017/27/L/ST7/03283 Publisher Copyright: © 2019 IEEE.

PY - 2019/9

Y1 - 2019/9

N2 - GaN/AlGaN lateral Schottky diodes, FinFETs and EdgeFETs were fabricated and studied. All these devices have fin-shaped active area, characterized by small input capacitance and are promising for high frequency applications.

AB - GaN/AlGaN lateral Schottky diodes, FinFETs and EdgeFETs were fabricated and studied. All these devices have fin-shaped active area, characterized by small input capacitance and are promising for high frequency applications.

KW - EdgeFET

KW - FinFET

KW - lateral Schottky diode

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ER -

Electrical and noise characteristics of fin-shaped GaN/AlGaN devices for high frequency operation

Abstract

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Bibliographical note

Keywords

Publisher link

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