Electrical and noise characteristics of fin-shaped GaN/AlGaN devices for high frequency operation

P. Sai, D. B. But, M. Dub, M. Sakowicz, B. Grzywacz, P. Prystawko, G. Cywinski, W. Knap, S. Rumyantsev

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

GaN/AlGaN lateral Schottky diodes, FinFETs and EdgeFETs were fabricated and studied. All these devices have fin-shaped active area, characterized by small input capacitance and are promising for high frequency applications.

Original languageEnglish (US)
Title of host publication49th European Solid-State Device Research Conference, ESSDERC 2019
PublisherEditions Frontieres
Pages90-93
Number of pages4
ISBN (Electronic)9781728115399
DOIs
StatePublished - Sep 2019
Externally publishedYes
Event49th European Solid-State Device Research Conference, ESSDERC 2019 - Cracow, Poland
Duration: Sep 23 2019Sep 26 2019

Publication series

NameEuropean Solid-State Device Research Conference
Volume2019-September
ISSN (Print)1930-8876

Conference

Conference49th European Solid-State Device Research Conference, ESSDERC 2019
Country/TerritoryPoland
CityCracow
Period9/23/199/26/19

Bibliographical note

Funding Information:
The work at CENTERA was supported by the Center for Terahertz Research and Applications project carried out within the International Research Agendas program of the Foundation for Polish Science co-financed by the European Union under the European Regional Development Fund, by the Foundation for Polish Science through the grant TEAM/2016-3/25 and by the National Science Centre, Poland allocated on the basis of the decisions No. UMO-2017/25/N/ST3/00408 and No. UMO-2017/27/L/ST7/03283

Publisher Copyright:
© 2019 IEEE.

Keywords

  • EdgeFET
  • FinFET
  • lateral Schottky diode

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