GaN/AlGaN lateral Schottky diodes, FinFETs and EdgeFETs were fabricated and studied. All these devices have fin-shaped active area, characterized by small input capacitance and are promising for high frequency applications.
|Original language||English (US)|
|Title of host publication||49th European Solid-State Device Research Conference, ESSDERC 2019|
|Number of pages||4|
|State||Published - Sep 2019|
|Event||49th European Solid-State Device Research Conference, ESSDERC 2019 - Cracow, Poland|
Duration: Sep 23 2019 → Sep 26 2019
|Name||European Solid-State Device Research Conference|
|Conference||49th European Solid-State Device Research Conference, ESSDERC 2019|
|Period||9/23/19 → 9/26/19|
Bibliographical noteFunding Information:
The work at CENTERA was supported by the Center for Terahertz Research and Applications project carried out within the International Research Agendas program of the Foundation for Polish Science co-financed by the European Union under the European Regional Development Fund, by the Foundation for Polish Science through the grant TEAM/2016-3/25 and by the National Science Centre, Poland allocated on the basis of the decisions No. UMO-2017/25/N/ST3/00408 and No. UMO-2017/27/L/ST7/03283
© 2019 IEEE.
- lateral Schottky diode