Electrical and magnetic characteristics of MBE-grown GaMnN

J. D. Albrecht, J. E. Van Nostrand, B. Claflin, Y. Liu, M. I. Nathan, P. P. Ruden

Research output: Contribution to journalArticlepeer-review

5 Scopus citations


We present magnetometry and charge transport data for a GaMnN film with approximately 7% (atomic) Mn grown by molecular beam epitaxy. Measurements of magnetization vs. applied magnetic field show hysteresis consistent with the existence of ferromagnetism up to 300 K. Magnetization curves as a function of temperature indicate a phase transition near 170 K. Temperature-dependent Hall effect measurements show n-type characteristics with high carrier concentration and low mobility, which are both only weakly dependent on temperature. Piezoresistance measurements under hydrostatic pressure yield pressure coefficients that show little variation for temperatures of 77, 194, and 300 K.

Original languageEnglish (US)
Pages (from-to)69-73
Number of pages5
JournalJournal of Superconductivity and Novel Magnetism
Issue number1
StatePublished - 2005


  • Ferromagnetic semiconductor
  • GaMnN
  • Hydrostatic pressure
  • Molecular beam epitaxy


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