Electrical analysis of mechanical stress induced by shallow trench isolation

Jiang Yanfeng, Ju Jiaxin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In many modern technologies, shallow trench isolation (STI) exhibits a potential application, especially for power devices or SOI ones. During its application, technologies have found the mechanical stress which originated from STI technology. This paper describes the usage of STI on power devices, which fulfills 700V technology on 100V BCD technology. Main results are the mobility variations with stress, the strong effect of Rsd on transistors. Then using the same approach on short devices with different distances gate edge to STI, we show how to evaluate stress distribution induced by STI as well as its mean value under the gate of the devices. These results help to understand, minimize or optimize stress effects.

Original languageEnglish (US)
Title of host publication2009 International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2009
Pages1236-1239
Number of pages4
DOIs
StatePublished - Nov 26 2009
Event2009 International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2009 - Beijing, China
Duration: Aug 10 2009Aug 13 2009

Publication series

Name2009 International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2009

Other

Other2009 International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2009
CountryChina
CityBeijing
Period8/10/098/13/09

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    Yanfeng, J., & Jiaxin, J. (2009). Electrical analysis of mechanical stress induced by shallow trench isolation. In 2009 International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2009 (pp. 1236-1239). [5270598] (2009 International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2009). https://doi.org/10.1109/ICEPT.2009.5270598