Electrical analysis of mechanical stress induced by shallow trench isolation

Jiang Yanfeng; Ju Jiaxin

doi:10.1109/ICEPT.2009.5270598

Electrical analysis of mechanical stress induced by shallow trench isolation

Jiang Yanfeng, Ju Jiaxin

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

In many modern technologies, shallow trench isolation (STI) exhibits a potential application, especially for power devices or SOI ones. During its application, technologies have found the mechanical stress which originated from STI technology. This paper describes the usage of STI on power devices, which fulfills 700V technology on 100V BCD technology. Main results are the mobility variations with stress, the strong effect of Rsd on transistors. Then using the same approach on short devices with different distances gate edge to STI, we show how to evaluate stress distribution induced by STI as well as its mean value under the gate of the devices. These results help to understand, minimize or optimize stress effects.

Original language	English (US)
Title of host publication	2009 International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2009
Pages	1236-1239
Number of pages	4
DOIs	https://doi.org/10.1109/ICEPT.2009.5270598
State	Published - Nov 26 2009
Event	2009 International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2009 - Beijing, China Duration: Aug 10 2009 → Aug 13 2009

Publication series

Name	2009 International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2009

Other

Other	2009 International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2009
Country/Territory	China
City	Beijing
Period	8/10/09 → 8/13/09

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10.1109/ICEPT.2009.5270598

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Yanfeng, J., & Jiaxin, J. (2009). Electrical analysis of mechanical stress induced by shallow trench isolation. In 2009 International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2009 (pp. 1236-1239). Article 5270598 (2009 International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2009). https://doi.org/10.1109/ICEPT.2009.5270598

Electrical analysis of mechanical stress induced by shallow trench isolation. / Yanfeng, Jiang; Jiaxin, Ju.
2009 International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2009. 2009. p. 1236-1239 5270598 (2009 International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2009).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yanfeng, J & Jiaxin, J 2009, Electrical analysis of mechanical stress induced by shallow trench isolation. in 2009 International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2009., 5270598, 2009 International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2009, pp. 1236-1239, 2009 International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2009, Beijing, China, 8/10/09. https://doi.org/10.1109/ICEPT.2009.5270598

Yanfeng J, Jiaxin J. Electrical analysis of mechanical stress induced by shallow trench isolation. In 2009 International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2009. 2009. p. 1236-1239. 5270598. (2009 International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2009). doi: 10.1109/ICEPT.2009.5270598

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abstract = "In many modern technologies, shallow trench isolation (STI) exhibits a potential application, especially for power devices or SOI ones. During its application, technologies have found the mechanical stress which originated from STI technology. This paper describes the usage of STI on power devices, which fulfills 700V technology on 100V BCD technology. Main results are the mobility variations with stress, the strong effect of Rsd on transistors. Then using the same approach on short devices with different distances gate edge to STI, we show how to evaluate stress distribution induced by STI as well as its mean value under the gate of the devices. These results help to understand, minimize or optimize stress effects.",

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AB - In many modern technologies, shallow trench isolation (STI) exhibits a potential application, especially for power devices or SOI ones. During its application, technologies have found the mechanical stress which originated from STI technology. This paper describes the usage of STI on power devices, which fulfills 700V technology on 100V BCD technology. Main results are the mobility variations with stress, the strong effect of Rsd on transistors. Then using the same approach on short devices with different distances gate edge to STI, we show how to evaluate stress distribution induced by STI as well as its mean value under the gate of the devices. These results help to understand, minimize or optimize stress effects.

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Electrical analysis of mechanical stress induced by shallow trench isolation

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