Electrical activation and local structure of Se atoms in ion-implanted indium phosphide

Kin Man Yu, Ning Chan, Leon Hsu

Research output: Contribution to journalReview articlepeer-review

2 Scopus citations

Abstract

The solid phase regrowth, dopant activation, and local environments of Se-implanted InP are investigated with ion-beam techniques and extended x-ray-absorption fine structure spectroscopy. We find that the local Se-In structure is already established in the as-implanted amorphous InP although the Se atoms have a lower average coordination number (∼3.5) and no long-range order. After high-temperature rapid thermal annealing (950°C, 5 s), the amorphous InP regrows, becoming a single crystal with the Se atoms bonded to four In neighbors; however, only ∼50% of the Se becomes electrically active. Part of the Se precipitates in the form of an In-Se phase, another part is compensated by defects which are not totally removed by annealing. The Se-In bond distance for a Se on a P site is 4.5% longer than the matrix In-P bond length, introducing large strains in the crystal. The solid solubility of Se in InP is estimated from our results to be ≈8.7×1019/cm3 while the electron concentration saturates at 5.4×1019/cm3. Se atoms in InP regrown at lower temperatures in a furnace are only ∼7% electrically active and are found to have different local environments (higher coordination number and shorter bond distance) than those in the InP perfectly regrown at higher temperature.

Original languageEnglish (US)
Pages (from-to)8445-8450
Number of pages6
JournalJournal of Applied Physics
Volume79
Issue number11
DOIs
StatePublished - Jun 1 1996

Fingerprint Dive into the research topics of 'Electrical activation and local structure of Se atoms in ion-implanted indium phosphide'. Together they form a unique fingerprint.

Cite this