Efficient quantum mechanical simulation of band-to-band tunneling

Cem Alper, Pierpaolo Palestri, Jose L. Padilla, Antonio Gnudi, Roberto Grassi, Elena Gnani, Mathieu Luisier, Adrian M. Ionescu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

In this work, we extend an already existing simulator for tunnel FETs to fully take into account nonparabolicity (NP) of the conduction band in all aspects, namely the wave-function (WF) and density of states (DOS) corrections for both charge and BTBT current calculation. Comparison against more advanced full-quantum simulators based on TB and k ·p Hamiltonians is presented as well and indicates very good matching between models for simple tunnel diodes. An initial parameter study of the Electron Hole Bilayer TFET (EHBTFET) indicates the presence of an optimum channel thickness, determined by the interplay between the subband alignment voltage and ON current level.

Original languageEnglish (US)
Title of host publicationEUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages141-144
Number of pages4
ISBN (Electronic)9781479969111
DOIs
StatePublished - Mar 18 2015
Event2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2015 - Bologna, Italy
Duration: Jan 26 2015Jan 28 2015

Publication series

NameEUROSOI-ULIS 2015 - 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon

Other

Other2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2015
CountryItaly
CityBologna
Period1/26/151/28/15

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