Effects of substrate orientation and channel stress on short-channel thin SOI MOSFETs

Amlan Majumdar, Christine Ouyang, Steven J. Koester, Wilfried Haensch

Research output: Contribution to journalArticlepeer-review

9 Scopus citations


We present a study of the effects of substrate orientation and longitudinal channel stress on the performance of extremely thin silicon-on-insulator (ETSOI) MOSFETs with gate lengths down to 25 nm. We find that short-channel electron and hole mobilities follow the long-channel mobility trends versus substrate orientation and longitudinal channel stress. We show that with respect to (100) silicon-on-insulator (SOI) substrates, short-channel ETSOI MOSFETs on (110) SOI substrates lead to 25% enhancement of the p-channel FET drive current at the expense of 12% degradation of the n-channel FET drive current at a fixed off-current of 100 nA/ μm and a supply voltage of 1 V. Finally, we estimate that an ETSOI complementary metaloxidesemiconductor (CMOS) on (110) SOI substrates should lead to 10% faster ring oscillators compared with those on (100) SOI wafers, which also implies that (100)-oriented wafers with (110) sidewalls are a better choice for fabricating nonplanar FinFETs and trigate CMOS circuits.

Original languageEnglish (US)
Article number5518409
Pages (from-to)2067-2072
Number of pages6
JournalIEEE Transactions on Electron Devices
Issue number9
StatePublished - Sep 2010


  • Complementary metal-oxide-semiconductor field-effect transistors (CMOSFETs)
  • fully depleted silicon-oninsulator (FDSOI)
  • mobility
  • substrate


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