We present a study of the effects of substrate orientation and longitudinal channel stress on the performance of extremely thin silicon-on-insulator (ETSOI) MOSFETs with gate lengths down to 25 nm. We find that short-channel electron and hole mobilities follow the long-channel mobility trends versus substrate orientation and longitudinal channel stress. We show that with respect to (100) silicon-on-insulator (SOI) substrates, short-channel ETSOI MOSFETs on (110) SOI substrates lead to 25% enhancement of the p-channel FET drive current at the expense of 12% degradation of the n-channel FET drive current at a fixed off-current of 100 nA/ μm and a supply voltage of 1 V. Finally, we estimate that an ETSOI complementary metaloxidesemiconductor (CMOS) on (110) SOI substrates should lead to 10% faster ring oscillators compared with those on (100) SOI wafers, which also implies that (100)-oriented wafers with (110) sidewalls are a better choice for fabricating nonplanar FinFETs and trigate CMOS circuits.
|Original language||English (US)|
|Number of pages||6|
|Journal||IEEE Transactions on Electron Devices|
|State||Published - Sep 1 2010|
- Complementary metal-oxide-semiconductor field-effect transistors (CMOSFETs)
- fully depleted silicon-oninsulator (FDSOI)