Effects of process parameters on particle formation in SiH4/N2O PECVD and WF6 CVD processes

Z. Wu; S. Nijhawan; S. A. Campbell; N. Rao; P. H. McMurry

Effects of process parameters on particle formation in SiH₄/N₂O PECVD and WF₆ CVD processes

Z. Wu, S. Nijhawan, S. A. Campbell, N. Rao, P. H. McMurry

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Particle Beam Mass Spectroscopy is used to determine the effects of various process parameters on particle production in PECVD of SiO₂ from silane and nitrous oxide and the thermal deposition of tungsten using both silane and hydrogen reductions of WF₆. In all cases the substrate temperature played a critical role in determining the concentration of particles observed in the effluent. Plasma power (in the PECVD process) and pressure (in the thermal processes) were also important variables. The real time capability of the system was used to demonstrate transient particle effects in all processes.

Original language	English (US)
Title of host publication	IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop
Publisher	IEEE
Pages	221-225
Number of pages	5
State	Published - Dec 1 1998
Event	Proceedings of the 1998 IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop - Boston, MA, USA Duration: Sep 23 1998 → Sep 25 1998

Other

Other	Proceedings of the 1998 IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop
City	Boston, MA, USA
Period	9/23/98 → 9/25/98

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title = "Effects of process parameters on particle formation in SiH4/N2O PECVD and WF6 CVD processes",

abstract = "Particle Beam Mass Spectroscopy is used to determine the effects of various process parameters on particle production in PECVD of SiO2 from silane and nitrous oxide and the thermal deposition of tungsten using both silane and hydrogen reductions of WF6. In all cases the substrate temperature played a critical role in determining the concentration of particles observed in the effluent. Plasma power (in the PECVD process) and pressure (in the thermal processes) were also important variables. The real time capability of the system was used to demonstrate transient particle effects in all processes.",

author = "Z. Wu and S. Nijhawan and Campbell, {S. A.} and N. Rao and McMurry, {P. H.}",

year = "1998",

month = dec,

day = "1",

language = "English (US)",

pages = "221--225",

booktitle = "IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop",

publisher = "IEEE",

note = "Proceedings of the 1998 IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop ; Conference date: 23-09-1998 Through 25-09-1998",

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TY - GEN

T1 - Effects of process parameters on particle formation in SiH4/N2O PECVD and WF6 CVD processes

AU - Wu, Z.

AU - Nijhawan, S.

AU - Campbell, S. A.

AU - Rao, N.

AU - McMurry, P. H.

PY - 1998/12/1

Y1 - 1998/12/1

N2 - Particle Beam Mass Spectroscopy is used to determine the effects of various process parameters on particle production in PECVD of SiO2 from silane and nitrous oxide and the thermal deposition of tungsten using both silane and hydrogen reductions of WF6. In all cases the substrate temperature played a critical role in determining the concentration of particles observed in the effluent. Plasma power (in the PECVD process) and pressure (in the thermal processes) were also important variables. The real time capability of the system was used to demonstrate transient particle effects in all processes.

AB - Particle Beam Mass Spectroscopy is used to determine the effects of various process parameters on particle production in PECVD of SiO2 from silane and nitrous oxide and the thermal deposition of tungsten using both silane and hydrogen reductions of WF6. In all cases the substrate temperature played a critical role in determining the concentration of particles observed in the effluent. Plasma power (in the PECVD process) and pressure (in the thermal processes) were also important variables. The real time capability of the system was used to demonstrate transient particle effects in all processes.

UR - http://www.scopus.com/inward/record.url?scp=0032255110&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032255110&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0032255110

SP - 221

EP - 225

BT - IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop

PB - IEEE

T2 - Proceedings of the 1998 IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop

Y2 - 23 September 1998 through 25 September 1998

ER -

Effects of process parameters on particle formation in SiH₄/N₂O PECVD and WF₆ CVD processes

Abstract

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Fingerprint Dive into the research topics of 'Effects of process parameters on particle formation in SiH<sub>4</sub>/N<sub>2</sub>O PECVD and WF<sub>6</sub> CVD processes'. Together they form a unique fingerprint.

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