Abstract
Particle Beam Mass Spectroscopy is used to determine the effects of various process parameters on particle production in PECVD of SiO2 from silane and nitrous oxide and the thermal deposition of tungsten using both silane and hydrogen reductions of WF6. In all cases the substrate temperature played a critical role in determining the concentration of particles observed in the effluent. Plasma power (in the PECVD process) and pressure (in the thermal processes) were also important variables. The real time capability of the system was used to demonstrate transient particle effects in all processes.
| Original language | English (US) |
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| Title of host publication | IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop |
| Publisher | IEEE |
| Pages | 221-225 |
| Number of pages | 5 |
| State | Published - Dec 1 1998 |
| Event | Proceedings of the 1998 IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop - Boston, MA, USA Duration: Sep 23 1998 → Sep 25 1998 |
Other
| Other | Proceedings of the 1998 IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop |
|---|---|
| City | Boston, MA, USA |
| Period | 9/23/98 → 9/25/98 |