Effects of process parameters on particle formation in SiH4/N2O PECVD and WF6 CVD processes

Z. Wu, S. Nijhawan, S. A. Campbell, N. Rao, P. H. McMurry

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

Particle Beam Mass Spectroscopy is used to determine the effects of various process parameters on particle production in PECVD of SiO2 from silane and nitrous oxide and the thermal deposition of tungsten using both silane and hydrogen reductions of WF6. In all cases the substrate temperature played a critical role in determining the concentration of particles observed in the effluent. Plasma power (in the PECVD process) and pressure (in the thermal processes) were also important variables. The real time capability of the system was used to demonstrate transient particle effects in all processes.

Original languageEnglish (US)
Title of host publicationIEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop
PublisherIEEE
Pages221-225
Number of pages5
StatePublished - Dec 1 1998
EventProceedings of the 1998 IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop - Boston, MA, USA
Duration: Sep 23 1998Sep 25 1998

Other

OtherProceedings of the 1998 IEEE/SEMI Advanced Semiconductor Manufacturing Conference and Workshop
CityBoston, MA, USA
Period9/23/989/25/98

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