Effects of interface states on the transport properties of all-oxide La0.8Sr0.2CoO3SrTi0.99Nb 0.01O3p-n heterojunctions

F. Y. Bruno; J. Garcia-Barriocanal; M. Torija; A. Rivera; Z. Sefrioui; C. Leighton; C. Leon; J. Santamaria

doi:10.1063/1.2887905

Effects of interface states on the transport properties of all-oxide La_0.8Sr_0.2CoO₃SrTi_0.99Nb _0.01O₃p-n heterojunctions

F. Y. Bruno, J. Garcia-Barriocanal, M. Torija, A. Rivera, Z. Sefrioui, C. Leighton, C. Leon, J. Santamaria

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23 Scopus citations

Abstract

Electrical transport properties of heteroepitaxial p-n junctions made of La0.8 Sr0.2 Co O3 and Sr Ti0.99 Nb0.01 O3 were studied. Junctions display highly rectifying current-voltage characteristics over a wide temperature range (20-300 K). Two distinct transport mechanisms are identified: tunneling assisted by interface states at T<130 K and diffusion/recombination at higher temperatures. Capacitance-voltage characteristics are used to determine the junction built-in potential at different frequencies. A capacitance relaxation is found due to charge trapping at interface states. Interface states, which deeply affect transport, are discussed in connection to charge-transfer processes related to the polarity mismatch at the interface.

Original language	English (US)
Article number	082106
Journal	Applied Physics Letters
Volume	92
Issue number	8
DOIs	https://doi.org/10.1063/1.2887905
State	Published - 2008

Bibliographical note

Funding Information:
The work at UCM was supported by MEC MAT 2005—06024 C02 and work at UMN was supported by NSF DMR.

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10.1063/1.2887905

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title = "Effects of interface states on the transport properties of all-oxide La0.8Sr0.2CoO3SrTi0.99Nb 0.01O3p-n heterojunctions",

abstract = "Electrical transport properties of heteroepitaxial p-n junctions made of La0.8 Sr0.2 Co O3 and Sr Ti0.99 Nb0.01 O3 were studied. Junctions display highly rectifying current-voltage characteristics over a wide temperature range (20-300 K). Two distinct transport mechanisms are identified: tunneling assisted by interface states at T<130 K and diffusion/recombination at higher temperatures. Capacitance-voltage characteristics are used to determine the junction built-in potential at different frequencies. A capacitance relaxation is found due to charge trapping at interface states. Interface states, which deeply affect transport, are discussed in connection to charge-transfer processes related to the polarity mismatch at the interface.",

author = "Bruno, {F. Y.} and J. Garcia-Barriocanal and M. Torija and A. Rivera and Z. Sefrioui and C. Leighton and C. Leon and J. Santamaria",

note = "Funding Information: The work at UCM was supported by MEC MAT 2005—06024 C02 and work at UMN was supported by NSF DMR.",

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volume = "92",

journal = "Applied Physics Letters",

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T1 - Effects of interface states on the transport properties of all-oxide La0.8Sr0.2CoO3SrTi0.99Nb 0.01O3p-n heterojunctions

AU - Bruno, F. Y.

AU - Garcia-Barriocanal, J.

AU - Torija, M.

AU - Rivera, A.

AU - Sefrioui, Z.

AU - Leighton, C.

AU - Leon, C.

AU - Santamaria, J.

N1 - Funding Information: The work at UCM was supported by MEC MAT 2005—06024 C02 and work at UMN was supported by NSF DMR.

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N2 - Electrical transport properties of heteroepitaxial p-n junctions made of La0.8 Sr0.2 Co O3 and Sr Ti0.99 Nb0.01 O3 were studied. Junctions display highly rectifying current-voltage characteristics over a wide temperature range (20-300 K). Two distinct transport mechanisms are identified: tunneling assisted by interface states at T<130 K and diffusion/recombination at higher temperatures. Capacitance-voltage characteristics are used to determine the junction built-in potential at different frequencies. A capacitance relaxation is found due to charge trapping at interface states. Interface states, which deeply affect transport, are discussed in connection to charge-transfer processes related to the polarity mismatch at the interface.

AB - Electrical transport properties of heteroepitaxial p-n junctions made of La0.8 Sr0.2 Co O3 and Sr Ti0.99 Nb0.01 O3 were studied. Junctions display highly rectifying current-voltage characteristics over a wide temperature range (20-300 K). Two distinct transport mechanisms are identified: tunneling assisted by interface states at T<130 K and diffusion/recombination at higher temperatures. Capacitance-voltage characteristics are used to determine the junction built-in potential at different frequencies. A capacitance relaxation is found due to charge trapping at interface states. Interface states, which deeply affect transport, are discussed in connection to charge-transfer processes related to the polarity mismatch at the interface.

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