Effects of interface states on the transport properties of all-oxide La0.8Sr0.2CoO3SrTi0.99Nb 0.01O3p-n heterojunctions

F. Y. Bruno, J. Garcia-Barriocanal, M. Torija, A. Rivera, Z. Sefrioui, C. Leighton, C. Leon, J. Santamaria

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Abstract

Electrical transport properties of heteroepitaxial p-n junctions made of La0.8 Sr0.2 Co O3 and Sr Ti0.99 Nb0.01 O3 were studied. Junctions display highly rectifying current-voltage characteristics over a wide temperature range (20-300 K). Two distinct transport mechanisms are identified: tunneling assisted by interface states at T<130 K and diffusion/recombination at higher temperatures. Capacitance-voltage characteristics are used to determine the junction built-in potential at different frequencies. A capacitance relaxation is found due to charge trapping at interface states. Interface states, which deeply affect transport, are discussed in connection to charge-transfer processes related to the polarity mismatch at the interface.

Original languageEnglish (US)
Article number082106
JournalApplied Physics Letters
Volume92
Issue number8
DOIs
StatePublished - Mar 6 2008

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heterojunctions
transport properties
oxides
capacitance-voltage characteristics
p-n junctions
polarity
capacitance
trapping
charge transfer
electric potential
temperature

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Effects of interface states on the transport properties of all-oxide La0.8Sr0.2CoO3SrTi0.99Nb 0.01O3p-n heterojunctions. / Bruno, F. Y.; Garcia-Barriocanal, J.; Torija, M.; Rivera, A.; Sefrioui, Z.; Leighton, C.; Leon, C.; Santamaria, J.

In: Applied Physics Letters, Vol. 92, No. 8, 082106, 06.03.2008.

Research output: Contribution to journalArticle

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AU - Rivera, A.

AU - Sefrioui, Z.

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AU - Leon, C.

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