Effects of impurities in hafnium dioxide

B. Xia; A. Stesmans; F. Chen; Z. Zhang; W. L. Gladfelter; S. A. Campbell

Effects of impurities in hafnium dioxide

B. Xia, A. Stesmans, F. Chen, Z. Zhang, W. L. Gladfelter, S. A. Campbell

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The effect of impurities in HfO ₂ is measured. The precursor used for these studies is Hf(NO ₃) ₄. Electron spin resonance measurements show no measurable response as deposited, but show a clear, localized NO ₂ signal after ⁶⁰Co gamma irradiation. A novel, two injector system was then used to introduce controlled concentrations of hydrogen, methanol, and ethanol during deposition. At concentrations of methanol corresponding to ̃1.5% carbon incorporation, capacitors show severe increases in leakage current density for thick films of HfO ₂ and charge trapping. Even the incorporation of hydrogen itself is found to dramatically increase charge trapping. For H contaminated films, significant fraction of the trapped charge detraps quickly (of order seconds) indicating the presence of shallow charge trapping. Hole trapping appears to be associated with carbon, however, and is more long lived.

Original language	English (US)
Title of host publication	Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II - Proceedings of the International Symposium
Editors	M.C. Ozturk, L.J. Chen, P.J. Timans, F. Roozeboom, E.P. Gusev
Pages	304-312
Number of pages	9
Volume	1
State	Published - Oct 28 2004
Event	Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II - Proceedings of the International Symposium - San Antonio, TX, United States Duration: May 10 2004 → May 12 2004

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Other	Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II - Proceedings of the International Symposium
Country/Territory	United States
City	San Antonio, TX
Period	5/10/04 → 5/12/04

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Effects of impurities in hafnium dioxide. / Xia, B.; Stesmans, A.; Chen, F. et al.
Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II - Proceedings of the International Symposium. ed. / M.C. Ozturk; L.J. Chen; P.J. Timans; F. Roozeboom; E.P. Gusev. Vol. 1 2004. p. 304-312.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Xia, B, Stesmans, A, Chen, F, Zhang, Z, Gladfelter, WL & Campbell, SA 2004, Effects of impurities in hafnium dioxide. in MC Ozturk, LJ Chen, PJ Timans, F Roozeboom & EP Gusev (eds), Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II - Proceedings of the International Symposium. vol. 1, pp. 304-312, Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II - Proceedings of the International Symposium, San Antonio, TX, United States, 5/10/04.

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title = "Effects of impurities in hafnium dioxide",

abstract = "The effect of impurities in HfO 2 is measured. The precursor used for these studies is Hf(NO 3) 4. Electron spin resonance measurements show no measurable response as deposited, but show a clear, localized NO 2 signal after 60Co gamma irradiation. A novel, two injector system was then used to introduce controlled concentrations of hydrogen, methanol, and ethanol during deposition. At concentrations of methanol corresponding to{\~ }1.5% carbon incorporation, capacitors show severe increases in leakage current density for thick films of HfO 2 and charge trapping. Even the incorporation of hydrogen itself is found to dramatically increase charge trapping. For H contaminated films, significant fraction of the trapped charge detraps quickly (of order seconds) indicating the presence of shallow charge trapping. Hole trapping appears to be associated with carbon, however, and is more long lived.",

author = "B. Xia and A. Stesmans and F. Chen and Z. Zhang and Gladfelter, {W. L.} and Campbell, {S. A.}",

year = "2004",

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language = "English (US)",

volume = "1",

pages = "304--312",

editor = "M.C. Ozturk and L.J. Chen and P.J. Timans and F. Roozeboom and E.P. Gusev",

booktitle = "Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II - Proceedings of the International Symposium",

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T1 - Effects of impurities in hafnium dioxide

AU - Xia, B.

AU - Stesmans, A.

AU - Chen, F.

AU - Zhang, Z.

AU - Gladfelter, W. L.

AU - Campbell, S. A.

PY - 2004/10/28

Y1 - 2004/10/28

N2 - The effect of impurities in HfO 2 is measured. The precursor used for these studies is Hf(NO 3) 4. Electron spin resonance measurements show no measurable response as deposited, but show a clear, localized NO 2 signal after 60Co gamma irradiation. A novel, two injector system was then used to introduce controlled concentrations of hydrogen, methanol, and ethanol during deposition. At concentrations of methanol corresponding to ̃1.5% carbon incorporation, capacitors show severe increases in leakage current density for thick films of HfO 2 and charge trapping. Even the incorporation of hydrogen itself is found to dramatically increase charge trapping. For H contaminated films, significant fraction of the trapped charge detraps quickly (of order seconds) indicating the presence of shallow charge trapping. Hole trapping appears to be associated with carbon, however, and is more long lived.

AB - The effect of impurities in HfO 2 is measured. The precursor used for these studies is Hf(NO 3) 4. Electron spin resonance measurements show no measurable response as deposited, but show a clear, localized NO 2 signal after 60Co gamma irradiation. A novel, two injector system was then used to introduce controlled concentrations of hydrogen, methanol, and ethanol during deposition. At concentrations of methanol corresponding to ̃1.5% carbon incorporation, capacitors show severe increases in leakage current density for thick films of HfO 2 and charge trapping. Even the incorporation of hydrogen itself is found to dramatically increase charge trapping. For H contaminated films, significant fraction of the trapped charge detraps quickly (of order seconds) indicating the presence of shallow charge trapping. Hole trapping appears to be associated with carbon, however, and is more long lived.

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BT - Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II - Proceedings of the International Symposium

A2 - Ozturk, M.C.

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T2 - Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II - Proceedings of the International Symposium

Y2 - 10 May 2004 through 12 May 2004

ER -

Effects of impurities in hafnium dioxide

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