Effects of impurities in hafnium dioxide

B. Xia, A. Stesmans, F. Chen, Z. Zhang, W. L. Gladfelter, S. A. Campbell

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The effect of impurities in HfO 2 is measured. The precursor used for these studies is Hf(NO 3) 4. Electron spin resonance measurements show no measurable response as deposited, but show a clear, localized NO 2 signal after 60Co gamma irradiation. A novel, two injector system was then used to introduce controlled concentrations of hydrogen, methanol, and ethanol during deposition. At concentrations of methanol corresponding to ̃1.5% carbon incorporation, capacitors show severe increases in leakage current density for thick films of HfO 2 and charge trapping. Even the incorporation of hydrogen itself is found to dramatically increase charge trapping. For H contaminated films, significant fraction of the trapped charge detraps quickly (of order seconds) indicating the presence of shallow charge trapping. Hole trapping appears to be associated with carbon, however, and is more long lived.

Original languageEnglish (US)
Title of host publicationAdvanced Short-Time Thermal Processing for Si-Based CMOS Devices II - Proceedings of the International Symposium
EditorsM.C. Ozturk, L.J. Chen, P.J. Timans, F. Roozeboom, E.P. Gusev
Pages304-312
Number of pages9
Volume1
StatePublished - Oct 28 2004
EventAdvanced Short-Time Thermal Processing for Si-Based CMOS Devices II - Proceedings of the International Symposium - San Antonio, TX, United States
Duration: May 10 2004May 12 2004

Other

OtherAdvanced Short-Time Thermal Processing for Si-Based CMOS Devices II - Proceedings of the International Symposium
CountryUnited States
CitySan Antonio, TX
Period5/10/045/12/04

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