Effects of Gate Recess Etching on Source Resistance

Gregory T. Cibuzar

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


Recessed gate microwave MESFET's and MODFET's have a recessed but unmetallized length Lδof the channel adjacent to the gate, whose resistance Rδcan significantly contribute to the source resistance RδThe ratio Rδ/Rδcan be determined using common test structures.

Original languageEnglish (US)
Pages (from-to)1195-1196
Number of pages2
JournalIEEE Transactions on Electron Devices
Issue number6
StatePublished - Jun 1995


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