Effects of Gate Recess Etching on Source Resistance

Gregory T. Cibuzar

doi:10.1109/16.387259

Effects of Gate Recess Etching on Source Resistance

Gregory T. Cibuzar

University of Minnesota Twin Cities

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Recessed gate microwave MESFET's and MODFET's have a recessed but unmetallized length Lδof the channel adjacent to the gate, whose resistance Rδcan significantly contribute to the source resistance RδThe ratio Rδ/Rδcan be determined using common test structures.

Original language	English (US)
Pages (from-to)	1195-1196
Number of pages	2
Journal	IEEE Transactions on Electron Devices
Volume	42
Issue number	6
DOIs	https://doi.org/10.1109/16.387259
State	Published - Jun 1995

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title = "Effects of Gate Recess Etching on Source Resistance",

abstract = "Recessed gate microwave MESFET's and MODFET's have a recessed but unmetallized length Lδof the channel adjacent to the gate, whose resistance Rδcan significantly contribute to the source resistance RδThe ratio Rδ/Rδcan be determined using common test structures.",

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AB - Recessed gate microwave MESFET's and MODFET's have a recessed but unmetallized length Lδof the channel adjacent to the gate, whose resistance Rδcan significantly contribute to the source resistance RδThe ratio Rδ/Rδcan be determined using common test structures.

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Effects of Gate Recess Etching on Source Resistance

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