Effects of electron-beam irradiation on structural, electrical, and optical properties of amorphous indium gallium zinc oxide thin films

Kiseok Jeon, Seung Wook Shin, Jaeseung Jo, Myung Sang Kim, Jae Cheol Shin, Chaehwan Jeong, Jun Hyung Lim, Junho Song, Jaeyeong Heo, Jin Hyeok Kim

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

High-energy electron-beam irradiation of indium gallium zinc oxide (IGZO) films improved the short-range arrangement. The increase in band gap was used as an indication of such improvement. X-ray diffraction confirmed that the films treated with a DC voltage of 2-4.5 kV for duration of up to 35 min are in the amorphous state or nanocrystalline phase. Higher energy electron-beam irradiation led to increased conductivity, which mainly comes from the drastic increase in electron concentration. Electron-beam treatment could be a viable route to improve the contact resistance between the source/drain and channel layer in thin-film transistor devices.

Original languageEnglish (US)
Pages (from-to)1591-1595
Number of pages5
JournalCurrent Applied Physics
Volume14
Issue number11
DOIs
StatePublished - Nov 2014

Bibliographical note

Funding Information:
This research was financially supported by Samsung Display . This research was also supported by Nano·Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (2009-0082580). The Hall measurements were performed at Korea Basic Science Institute (Gwangju, Rep. of Korea).

Keywords

  • Amorphous oxide semiconductor
  • Electron-beam irradiation
  • Indium gallium zinc oxide

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