High-energy electron-beam irradiation of indium gallium zinc oxide (IGZO) films improved the short-range arrangement. The increase in band gap was used as an indication of such improvement. X-ray diffraction confirmed that the films treated with a DC voltage of 2-4.5 kV for duration of up to 35 min are in the amorphous state or nanocrystalline phase. Higher energy electron-beam irradiation led to increased conductivity, which mainly comes from the drastic increase in electron concentration. Electron-beam treatment could be a viable route to improve the contact resistance between the source/drain and channel layer in thin-film transistor devices.
Bibliographical noteFunding Information:
This research was financially supported by Samsung Display . This research was also supported by Nano·Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (2009-0082580). The Hall measurements were performed at Korea Basic Science Institute (Gwangju, Rep. of Korea).
- Amorphous oxide semiconductor
- Electron-beam irradiation
- Indium gallium zinc oxide