Effects of block copolymer polydispersity and χN on pattern line edge roughness and line width roughness from directed self-assembly of diblock copolymers

Andrew J Peters, Richard A. Lawson, Peter J. Ludovice, Clifford L. Henderson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Abstract

This paper addresses two fundamental issues: (1) the connection between block copolymer polydispersity (as measured by a polydisperisty index (PDI)) and pattern LER/ LWR limits and (2) the connection between block copolymer χN value and pattern LER/LWR limits. In this work, we have used coarse grained molecular dynamics (MD) simulations of BCP DSA to study the effect of block copolymer PDI on DSA properties including LER/LWR and patterning capability. It is observed that as PDI increases from 1 to values of ∼1.3, there is little effect on pattern LER/LWR, and as PDI increases above ∼1.3 the LER/LWR increases slowly with increasing PDI. This suggests that LER/LWR concerns are not a major determinant in terms of specifying block copolymer PDI requirements for DSA processes. Concerning χN and LER/LWR, there is a sharp increase in roughness for χN<30. Because of the sharp increase at such low χN values, it is unlikely that BCP DSA processes for semiconductor manufacturing will be able to operate at low χN values even though microphase separation still occurs at these low χN values.

Original languageEnglish (US)
Title of host publicationAlternative Lithographic Technologies V
Volume8680
DOIs
StatePublished - Jun 5 2013
EventAlternative Lithographic Technologies V - San Jose, CA, United States
Duration: Feb 25 2013Feb 28 2013

Other

OtherAlternative Lithographic Technologies V
CountryUnited States
CitySan Jose, CA
Period2/25/132/28/13

Fingerprint

Polydispersity
Block Copolymers
Copolymer
Self-assembly
Linewidth
block copolymers
Roughness
Self assembly
Block copolymers
self assembly
copolymers
roughness
Surface roughness
Line
Microphase separation
Molecular dynamics
Semiconductor Manufacturing
Patterning
Semiconductor materials
determinants

Keywords

  • Coarse grained
  • Computational
  • Directed self-assembly
  • GPU
  • LER
  • LWR
  • Molecular dynamics
  • PDI
  • Roughness
  • χ

Cite this

Peters, A. J., Lawson, R. A., Ludovice, P. J., & Henderson, C. L. (2013). Effects of block copolymer polydispersity and χN on pattern line edge roughness and line width roughness from directed self-assembly of diblock copolymers. In Alternative Lithographic Technologies V (Vol. 8680). [868020] https://doi.org/10.1117/12.2021443

Effects of block copolymer polydispersity and χN on pattern line edge roughness and line width roughness from directed self-assembly of diblock copolymers. / Peters, Andrew J; Lawson, Richard A.; Ludovice, Peter J.; Henderson, Clifford L.

Alternative Lithographic Technologies V. Vol. 8680 2013. 868020.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Peters, AJ, Lawson, RA, Ludovice, PJ & Henderson, CL 2013, Effects of block copolymer polydispersity and χN on pattern line edge roughness and line width roughness from directed self-assembly of diblock copolymers. in Alternative Lithographic Technologies V. vol. 8680, 868020, Alternative Lithographic Technologies V, San Jose, CA, United States, 2/25/13. https://doi.org/10.1117/12.2021443
Peters, Andrew J ; Lawson, Richard A. ; Ludovice, Peter J. ; Henderson, Clifford L. / Effects of block copolymer polydispersity and χN on pattern line edge roughness and line width roughness from directed self-assembly of diblock copolymers. Alternative Lithographic Technologies V. Vol. 8680 2013.
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