Effects of annealing on charge in HfO2 gate stacks

Z. Zhang, M. Li, S. A. Campbell

Research output: Contribution to journalArticlepeer-review

18 Scopus citations


This letter presents a systematic investigation of charge in HfO 2 gate stacks. Assuming that the majority of charge is associated with the stack interfaces, it is found that the charge at the HfO2/interfacial layer (IL) interface is negative while the charge at the Si/IL interface is positive. In general, the calculated charge densities at both interfaces are of order 1012 cm -2. A forming gas anneal (FGA) reduces the interface charge greatly at both interfaces. However, the FGA temperature does not have much effect on the charge density. The effects of post deposition anneal at various temperatures and under various atmospheres are also studied. Its found that a high temperature dilute oxidizing atmosphere anneal reduces the charge at both interfaces.

Original languageEnglish (US)
Pages (from-to)20-22
Number of pages3
JournalIEEE Electron Device Letters
Issue number1
StatePublished - Jan 1 2005


  • Annealing
  • Charge
  • Gate dielectric
  • HfO
  • High-k
  • Metal gate electrode
  • Work function

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