Effects of a-plane sapphire substrate tilt angles on the growth behavior of nonpolar a-plane GaN

Sung Hyun Park, Jinsub Park, Daeyoung Moon, Namhyuk Kim, Duck Jae You, Junghwan Kim, Jinki Kang, Sang Moon Lee, Ju Sung Kim, Moon Seung Yang, Taek Kim, Euijoon Yoon

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

We investigated the effect of a slight tilt of an r-plane sapphire substrate on the morphological properties of a-plane GaN grown by using metal-organic chemical vapor deposition. The tilt angle of the r-plane sapphire was varied from 0° to -0.65° toward the c-axis of sapphire. Slight tilt angles of the r-plane sapphire toward the c-axis of sapphire ranging from 0° to -0.37° were found to be suitable for growing triangular pit-free a-plane GaN with a microscopically smooth surface. Tilt angles larger than -0.37° improved the crystalline quality in the direction of the m- axis of GaN but caused non-uniform growth and pit formation on the surface.

Original languageEnglish (US)
Pages (from-to)906-910
Number of pages5
JournalJournal of the Korean Physical Society
Volume58
Issue number41
DOIs
StatePublished - Apr 4 2011

Keywords

  • MOCVD
  • Nonpolar
  • Tilt angle
  • a-plane GaN
  • r-plane sapphire

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