We studied silicon, carbon, and SiCx nanostructures fabricated using liquid-phase electron-beam-induced deposition technology in transmission electron microscopy systems. Nanodots obtained from fixed electron beam irradiation followed a universal size versus beam dose trend, with precursor concentrations from pure SiCl4 to 0 % SiCl4 in CH2Cl2, and electron beam intensity ranges of two orders of magnitude, showing good controllability of the deposition. Secondary electrons contributed to the determination of the lateral sizes of the nanostructures, while the primary beam appeared to have an effect in reducing the vertical growth rate. These results can be used to generate donut-shaped nanostructures. Using a scanning electron beam, line structures with both branched and unbranched morphologies were also obtained. The liquid-phase electron-beam-induced deposition technology is shown to be an effective tool for advanced nanostructured material generation.
Bibliographical noteFunding Information:
The TEM experiment was carried out in part in the Frederick Seitz Materials Research Laboratory Central Facilities, University of Illinois, which are partially supported by the U.S. Department of Energy under grants DE-FG02-07ER46453 and DEFG02- 07ER46471. The authors thank S. J. Dillon, Y. Liu, K.-W. Noh, A. Shah, T. Shang, J. G. Wen, and J. M. Zuo for their kind help. The supports from the Shanghai Leading Academic Discipline Project (B502), the Shanghai Key Laboratory Project (08DZ2230500), the Science and Technology Commission of Shanghai Municipality (11nm0507000), the State Key Laboratory of Functional Materials for Informatics Open Project (SKL201306), the Shanghai Pujiang Program (13PJ1401700), and.
- Electron-beam-induced deposition
- In situ TEM