A study, which demonstrated that Ground Plane (GP)-SOI devices are optimal for the digital body biasing (DBB) technique, was presented. GP SOI MOSFET was shown to have advantages over bulk devices, such as better controllability of V t, and the absence of p-n junctions, which alleviates the issues related to forward-biased junction currents for swapped back biases. It was shown that GP-SOI MOSFET's were optimal for the DBB scheme offering high on-current and low design complexity without having power/performance issues related to the forward-biased p-n junction current in bulk CMOS. The result also shows that GP-SOI can deliver same performance as DG-SOI at 90X lower standby leakage by dynamically switching the back-gate bias.
|Original language||English (US)|
|Number of pages||2|
|Journal||Proceedings - IEEE International SOI Conference|
|State||Published - Dec 1 2004|
|Event||2004 IEEE International SOI Conference, Proceedings - Charleston, SC, United States|
Duration: Oct 4 2004 → Oct 7 2004