Effective mass from microwave photoresistance measurements in GaAs/AlGaAs quantum wells

A. T. Hatke, M. A. Zudov, J. D. Watson, M. J. Manfra, L. N. Pfeiffer, K. W. West

Research output: Contribution to journalConference articlepeer-review


We have performed microwave photoresistance measurements in high mobility GaAs/AlGaAs quantum wells and investigated the value of the effective mass. The effective mass, obtained from the period of microwave-induced resistance oscillations (MIRO), was found to be about 12 % lower than the band mass in GaAs, m*b. In contrast, the measured magneto-plasmon dispersion (MPR) revealed an effective mass which is close to m*b, in accord with previous studies. These findings suggest that, in contrast to MPR, the MIRO dispersion contains corrections due to electron-electron interaction effects.

Original languageEnglish (US)
Article number012040
JournalJournal of Physics: Conference Series
Issue number1
StatePublished - 2013
Event20th International Conference on the Application of High Magnetic Fields in Semiconductor Physics, HMF 2012 - Chamonix Mont Blanc, France
Duration: Jul 22 2012Jul 27 2012


Dive into the research topics of 'Effective mass from microwave photoresistance measurements in GaAs/AlGaAs quantum wells'. Together they form a unique fingerprint.

Cite this