Abstract
The electrical characteristics of a heterojunction tunneling field-effect transistor (HETT), with a p-type Si0.75Ge0.25 source, have been measured as a function of strain. HETTs with channel transport and applied strain both in the [110] direction show a smooth monotonic change in drain current over a range of 0.09% compressive to 0.13% tensile strain. A measure γ = (d/d ln JD)(d ln JD/ds) s = 0 of the effect of strain s on tunneling current JD is proposed, which captures the dependence of the tunneling exponential argument on strain. An experimental value of γ = - 11.7 is extracted for the tensile case and compared to simulation results. We found theoretically that the value and sign of γ depend sensitively on the built-in strain at the SiSiGe interface.
Original language | English (US) |
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Article number | 5723690 |
Pages (from-to) | 464-466 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 32 |
Issue number | 4 |
DOIs | |
State | Published - Apr 1 2011 |
Keywords
- Band-to-band tunneling
- strain
- stress
- tunneling FET (TFET)