Effect of uniaxial strain on the drain current of a heterojunction tunneling field-effect transistor

Paul M. Solomon; I. Lauer; A. Majumdar; J. T. Teherani; M. Luisier; J. Cai; S. J. Koester

doi:10.1109/LED.2011.2108993

Effect of uniaxial strain on the drain current of a heterojunction tunneling field-effect transistor

Paul M. Solomon, I. Lauer, A. Majumdar, J. T. Teherani, M. Luisier, J. Cai, S. J. Koester

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

The electrical characteristics of a heterojunction tunneling field-effect transistor (HETT), with a p-type Si_0.75Ge_0.25 source, have been measured as a function of strain. HETTs with channel transport and applied strain both in the [110] direction show a smooth monotonic change in drain current over a range of 0.09% compressive to 0.13% tensile strain. A measure γ = (d/d ln J_D)(d ln J_D/ds) s = 0 of the effect of strain s on tunneling current J_D is proposed, which captures the dependence of the tunneling exponential argument on strain. An experimental value of γ = - 11.7 is extracted for the tensile case and compared to simulation results. We found theoretically that the value and sign of γ depend sensitively on the built-in strain at the SiSiGe interface.

Original language	English (US)
Article number	5723690
Pages (from-to)	464-466
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	32
Issue number	4
DOIs	https://doi.org/10.1109/LED.2011.2108993
State	Published - Apr 2011

Bibliographical note

Funding Information:
Manuscript received December 13, 2010; accepted January 15, 2011. Date of publication March 3, 2011; date of current version March 23, 2011. This work was supported by Defense Advanced Research Projects Agency under Air Force Research Laboratory Contract FA8650-08-C-7806. The review of this letter was arranged by Editor B.-G. Park. P. M. Solomon, I. Lauer, A. Majumdar, and J. Cai are with the IBM T. J. Research Center, Yorktown Heights, NY 10598 USA (e-mail: solomonp@us. ibm.com; ilauer@us.ibm.com; amajumd@us.ibm.com; jincai@us.ibm.com). J. T. Teherani is with the Massachusetts Institute of Technology, Cambridge, MA 02139-4307 USA (e-mail: teherani@mit.edu). M. Luisier is with Purdue University, West Lafayette, IN 47907 USA (e-mail: mluisier@ecn.purdue.edu). S. J. Koester is with the University of Minnesota, Minneapolis, MN 55455 USA (e-mail: skoester@umn.edu). Color versions of one or more of the figures in this letter are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/LED.2011.2108993 Fig. 1. Schematic cross section near the tunneling source region of HETT device, with carrier generation regions superimposed. (1) p+ (shaded) doped and (2) undoped Si0.75Ge0.25 sources, (3) undoped Si channel, (4) polysilicon gate, (5) HfO2 and (6) SiO2 gate insulator layers, and (6a) SiO2 layer in gate-overhung region, in place for SiGe growth. The band-to-band generation rate (in cm−3/s) is superimposed on the device cross section. The arrows show the crystal direction.

Keywords

Band-to-band tunneling
strain
stress
tunneling FET (TFET)

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@article{4bfc1bf99fbd47e6ad4b4915ba41fa38,

title = "Effect of uniaxial strain on the drain current of a heterojunction tunneling field-effect transistor",

abstract = "The electrical characteristics of a heterojunction tunneling field-effect transistor (HETT), with a p-type Si0.75Ge0.25 source, have been measured as a function of strain. HETTs with channel transport and applied strain both in the [110] direction show a smooth monotonic change in drain current over a range of 0.09% compressive to 0.13% tensile strain. A measure γ = (d/d ln JD)(d ln JD/ds) s = 0 of the effect of strain s on tunneling current JD is proposed, which captures the dependence of the tunneling exponential argument on strain. An experimental value of γ = - 11.7 is extracted for the tensile case and compared to simulation results. We found theoretically that the value and sign of γ depend sensitively on the built-in strain at the SiSiGe interface.",

keywords = "Band-to-band tunneling, strain, stress, tunneling FET (TFET)",

author = "Solomon, {Paul M.} and I. Lauer and A. Majumdar and Teherani, {J. T.} and M. Luisier and J. Cai and Koester, {S. J.}",

note = "Funding Information: Manuscript received December 13, 2010; accepted January 15, 2011. Date of publication March 3, 2011; date of current version March 23, 2011. This work was supported by Defense Advanced Research Projects Agency under Air Force Research Laboratory Contract FA8650-08-C-7806. The review of this letter was arranged by Editor B.-G. Park. P. M. Solomon, I. Lauer, A. Majumdar, and J. Cai are with the IBM T. J. Research Center, Yorktown Heights, NY 10598 USA (e-mail: solomonp@us. ibm.com; ilauer@us.ibm.com; amajumd@us.ibm.com; jincai@us.ibm.com). J. T. Teherani is with the Massachusetts Institute of Technology, Cambridge, MA 02139-4307 USA (e-mail: teherani@mit.edu). M. Luisier is with Purdue University, West Lafayette, IN 47907 USA (e-mail: mluisier@ecn.purdue.edu). S. J. Koester is with the University of Minnesota, Minneapolis, MN 55455 USA (e-mail: skoester@umn.edu). Color versions of one or more of the figures in this letter are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/LED.2011.2108993 Fig. 1. Schematic cross section near the tunneling source region of HETT device, with carrier generation regions superimposed. (1) p+ (shaded) doped and (2) undoped Si0.75Ge0.25 sources, (3) undoped Si channel, (4) polysilicon gate, (5) HfO2 and (6) SiO2 gate insulator layers, and (6a) SiO2 layer in gate-overhung region, in place for SiGe growth. The band-to-band generation rate (in cm−3/s) is superimposed on the device cross section. The arrows show the crystal direction.",

year = "2011",

month = apr,

doi = "10.1109/LED.2011.2108993",

language = "English (US)",

volume = "32",

pages = "464--466",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

}

TY - JOUR

T1 - Effect of uniaxial strain on the drain current of a heterojunction tunneling field-effect transistor

AU - Solomon, Paul M.

AU - Lauer, I.

AU - Majumdar, A.

AU - Teherani, J. T.

AU - Luisier, M.

AU - Cai, J.

AU - Koester, S. J.

N1 - Funding Information: Manuscript received December 13, 2010; accepted January 15, 2011. Date of publication March 3, 2011; date of current version March 23, 2011. This work was supported by Defense Advanced Research Projects Agency under Air Force Research Laboratory Contract FA8650-08-C-7806. The review of this letter was arranged by Editor B.-G. Park. P. M. Solomon, I. Lauer, A. Majumdar, and J. Cai are with the IBM T. J. Research Center, Yorktown Heights, NY 10598 USA (e-mail: solomonp@us. ibm.com; ilauer@us.ibm.com; amajumd@us.ibm.com; jincai@us.ibm.com). J. T. Teherani is with the Massachusetts Institute of Technology, Cambridge, MA 02139-4307 USA (e-mail: teherani@mit.edu). M. Luisier is with Purdue University, West Lafayette, IN 47907 USA (e-mail: mluisier@ecn.purdue.edu). S. J. Koester is with the University of Minnesota, Minneapolis, MN 55455 USA (e-mail: skoester@umn.edu). Color versions of one or more of the figures in this letter are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/LED.2011.2108993 Fig. 1. Schematic cross section near the tunneling source region of HETT device, with carrier generation regions superimposed. (1) p+ (shaded) doped and (2) undoped Si0.75Ge0.25 sources, (3) undoped Si channel, (4) polysilicon gate, (5) HfO2 and (6) SiO2 gate insulator layers, and (6a) SiO2 layer in gate-overhung region, in place for SiGe growth. The band-to-band generation rate (in cm−3/s) is superimposed on the device cross section. The arrows show the crystal direction.

PY - 2011/4

Y1 - 2011/4

N2 - The electrical characteristics of a heterojunction tunneling field-effect transistor (HETT), with a p-type Si0.75Ge0.25 source, have been measured as a function of strain. HETTs with channel transport and applied strain both in the [110] direction show a smooth monotonic change in drain current over a range of 0.09% compressive to 0.13% tensile strain. A measure γ = (d/d ln JD)(d ln JD/ds) s = 0 of the effect of strain s on tunneling current JD is proposed, which captures the dependence of the tunneling exponential argument on strain. An experimental value of γ = - 11.7 is extracted for the tensile case and compared to simulation results. We found theoretically that the value and sign of γ depend sensitively on the built-in strain at the SiSiGe interface.

AB - The electrical characteristics of a heterojunction tunneling field-effect transistor (HETT), with a p-type Si0.75Ge0.25 source, have been measured as a function of strain. HETTs with channel transport and applied strain both in the [110] direction show a smooth monotonic change in drain current over a range of 0.09% compressive to 0.13% tensile strain. A measure γ = (d/d ln JD)(d ln JD/ds) s = 0 of the effect of strain s on tunneling current JD is proposed, which captures the dependence of the tunneling exponential argument on strain. An experimental value of γ = - 11.7 is extracted for the tensile case and compared to simulation results. We found theoretically that the value and sign of γ depend sensitively on the built-in strain at the SiSiGe interface.

KW - Band-to-band tunneling

KW - strain

KW - stress

KW - tunneling FET (TFET)

UR - http://www.scopus.com/inward/record.url?scp=79953037663&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79953037663&partnerID=8YFLogxK

U2 - 10.1109/LED.2011.2108993

DO - 10.1109/LED.2011.2108993

M3 - Article

AN - SCOPUS:79953037663

VL - 32

SP - 464

EP - 466

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 4

M1 - 5723690

ER -

Effect of uniaxial strain on the drain current of a heterojunction tunneling field-effect transistor

Abstract

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