Effect of thermal processing on strain relaxation and interdiffusion in Si/SiGe heterostructures studied using Raman spectroscopy

S. J. Koester, K. Rim, J. O. Chu, P. M. Mooney, J. A. Ott, M. A. Hargrove

Research output: Contribution to journalArticlepeer-review

52 Scopus citations

Abstract

The effect of thermal annealing on Si/SiGe heterostructures is studied using Raman spectroscopy. The structures consisted of Si on relaxed Si0.8Ge0.2 where the top Si thickness was 20-30 nm. Micro-Raman spectroscopy with 488 nm incident radiation revealed no significant shift in the strained Si peak position with thermal annealing at temperatures up to 1100°C for 30 s. However, the intensity of the Si peak was systematically reduced with increasing thermal processing, a result which is attributed to interdiffusion at the Si/SiGe interface resulting in an apparent thinning of the Si cap layer.

Original languageEnglish (US)
Pages (from-to)2148-2150
Number of pages3
JournalApplied Physics Letters
Volume79
Issue number14
DOIs
StatePublished - Oct 1 2001

Fingerprint Dive into the research topics of 'Effect of thermal processing on strain relaxation and interdiffusion in Si/SiGe heterostructures studied using Raman spectroscopy'. Together they form a unique fingerprint.

Cite this