Effect of sulfurization temperature on the properties of Cu2ZnSn(S, Se)4 Thin Films

Yeong Yung Yoo, Chang woo Hong, Myeng Gil Gang, Seung Wook Shin, Young baek Kim, Jong Ha Moon, Yong Jeong Lee, Jin Hyoek Kim

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Cu2ZnSn(Sx, Se11-x)4 (CZTSSe) thin films were prepared by sulfurization of evaporated precursor thin films. Precursor was prepared using evaporation method at room temperature. The sulfurization was carried out in a graphite box with S powder at different temperatures. The temperatures were varied in a four step process from 520°C to 580°C. The effects of the sulfurization temperature on the micro-structural, morphological, and compositional properties of the CZTSSe thin films were investigated using X-ray diffraction (XRD), Raman spectra, field emission scanning electron microscopy (FE-SEM), and transmission electron microscopy (TEM). The XRD and Raman results showed that the sulfurized thin films had a single kesterite crystal CZTSSe. From the FE-SEM and TEM results, the Mo(Sx, Se1-x)2 (MoSSe) interfacial layers of the sulfurized CZTS thin films were observed and their thickness was seen to increase with increasing sulfurization temperature. The microstructures of the CZTSSe thin films were strongly related to the sulfurization temperatures. The voids in the CZTSSe thin films increased with the increasing sulfurization temperature.

Original languageEnglish (US)
Pages (from-to)613-619
Number of pages7
JournalKorean Journal of Materials Research
Issue number11
StatePublished - Nov 2013


  • CZTSSe
  • Kesterite
  • Microstrucuture
  • Sulfurization


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