Effect of polarization fields on transport properties in AlGaN/GaN heterostructures

L. Hsu, W. Walukiewicz

Research output: Contribution to journalArticlepeer-review

143 Scopus citations


We have calculated transport properties of unintentionally doped n-type AlGaN/GaN heterostructures. Using a thermodynamic model of defect formation, we have modeled the charge transfer process in such heterostructures, obtaining good agreement with experiment. The large polarization fields in the heterostructure dramatically lower the formation energy of the surface defects, leading to the observed extremely large two-dimensional electron gas concentrations. Calculations of the low temperature mobilities were also performed, showing that alloy disorder and, in some cases, interface roughness, are the dominant low-temperature carrier scattering mechanisms. At low temperatures a maximum intrinsic mobility of about 105 cm2/V is predicted for these heterostructures.

Original languageEnglish (US)
Pages (from-to)1783-1789
Number of pages7
JournalJournal of Applied Physics
Issue number3
StatePublished - Feb 1 2001

Bibliographical note

Copyright 2005 Elsevier Science B.V., Amsterdam. All rights reserved.


Dive into the research topics of 'Effect of polarization fields on transport properties in AlGaN/GaN heterostructures'. Together they form a unique fingerprint.

Cite this