Effect of impurity scattering of a tunneling electron on variable-range hopping conduction

B. I. Shklovskii; B. Z. Spivak

doi:10.1007/BF01017862

Effect of impurity scattering of a tunneling electron on variable-range hopping conduction

B. I. Shklovskii, B. Z. Spivak

Physics and Astronomy (Twin Cities)

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

Variable-range hopping conduction in semiconductors is determined by the asymptotic behavior of impurity wave functions on distances much larger than mean interimpurity separation. Scattering of an impurity electron by the other impurities situated near its tunneling path is shown to result in a correction Δa to electron localization length a. This correction depends on the impurity scattering length and impurity concentration N and may be of the order of a(Na³) or a(Na³)^1/2.

Original language	English (US)
Pages (from-to)	267-272
Number of pages	6
Journal	Journal of Statistical Physics
Volume	38
Issue number	1-2
DOIs	https://doi.org/10.1007/BF01017862
State	Published - Jan 1985

Keywords

Impurity
hopping conduction
tunneling

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10.1007/BF01017862

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title = "Effect of impurity scattering of a tunneling electron on variable-range hopping conduction",

abstract = "Variable-range hopping conduction in semiconductors is determined by the asymptotic behavior of impurity wave functions on distances much larger than mean interimpurity separation. Scattering of an impurity electron by the other impurities situated near its tunneling path is shown to result in a correction Δa to electron localization length a. This correction depends on the impurity scattering length and impurity concentration N and may be of the order of a(Na3) or a(Na3)1/2.",

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T1 - Effect of impurity scattering of a tunneling electron on variable-range hopping conduction

AU - Shklovskii, B. I.

AU - Spivak, B. Z.

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N2 - Variable-range hopping conduction in semiconductors is determined by the asymptotic behavior of impurity wave functions on distances much larger than mean interimpurity separation. Scattering of an impurity electron by the other impurities situated near its tunneling path is shown to result in a correction Δa to electron localization length a. This correction depends on the impurity scattering length and impurity concentration N and may be of the order of a(Na3) or a(Na3)1/2.

AB - Variable-range hopping conduction in semiconductors is determined by the asymptotic behavior of impurity wave functions on distances much larger than mean interimpurity separation. Scattering of an impurity electron by the other impurities situated near its tunneling path is shown to result in a correction Δa to electron localization length a. This correction depends on the impurity scattering length and impurity concentration N and may be of the order of a(Na3) or a(Na3)1/2.

KW - Impurity

KW - hopping conduction

KW - tunneling

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JO - Journal of Statistical Physics

JF - Journal of Statistical Physics

IS - 1-2

ER -

Effect of impurity scattering of a tunneling electron on variable-range hopping conduction

Abstract

Keywords

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