Effect of hydrostatic pressure on the barrier height of Ni Schottky contacts on n-AlGaN

Y. Liu; M. Z. Kauser; P. P. Ruden; Z. Hassan; Y. C. Lee; S. S. Ng; F. K. Yam

doi:10.1063/1.2164909

Effect of hydrostatic pressure on the barrier height of Ni Schottky contacts on n-AlGaN

Y. Liu, M. Z. Kauser, P. P. Ruden, Z. Hassan, Y. C. Lee, S. S. Ng, F. K. Yam

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

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Abstract

We report measurements of the Schottky barrier height of Ni contacts on Ga-polarity n- Al0.08 Ga0.92 N as a function of pressure. With applied hydrostatic pressure, Al0.08 Ga0.92 N Schottky diodes show a decrease in the forward bias current, and correspondingly an increase in the barrier height, which is approximately twice as large as that previously reported for Schottky contacts on Ga-polarity n-GaN. The observed change in barrier height with pressure is attributed to a combination of band structure and piezoelectric effects. The larger change of barrier height for Al0.08 Ga0.92 N can be explained by its larger piezoelectric constants and smaller density of interface states at the metal-semiconductor interface compared to GaN.

Original language	English (US)
Article number	022109
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	88
Issue number	2
DOIs	https://doi.org/10.1063/1.2164909
State	Published - 2006

Bibliographical note

Funding Information:
The authors acknowledge partial support from NSF/ECS and NASA/JPL. Support from a Fulbright grant, CIES, IIE, IRPA RMK-8 Strategic Research grant, University of Minnesota, and Universiti Sains Malaysia is also gratefully acknowledged.

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title = "Effect of hydrostatic pressure on the barrier height of Ni Schottky contacts on n-AlGaN",

abstract = "We report measurements of the Schottky barrier height of Ni contacts on Ga-polarity n- Al0.08 Ga0.92 N as a function of pressure. With applied hydrostatic pressure, Al0.08 Ga0.92 N Schottky diodes show a decrease in the forward bias current, and correspondingly an increase in the barrier height, which is approximately twice as large as that previously reported for Schottky contacts on Ga-polarity n-GaN. The observed change in barrier height with pressure is attributed to a combination of band structure and piezoelectric effects. The larger change of barrier height for Al0.08 Ga0.92 N can be explained by its larger piezoelectric constants and smaller density of interface states at the metal-semiconductor interface compared to GaN.",

author = "Y. Liu and Kauser, {M. Z.} and Ruden, {P. P.} and Z. Hassan and Lee, {Y. C.} and Ng, {S. S.} and Yam, {F. K.}",

note = "Funding Information: The authors acknowledge partial support from NSF/ECS and NASA/JPL. Support from a Fulbright grant, CIES, IIE, IRPA RMK-8 Strategic Research grant, University of Minnesota, and Universiti Sains Malaysia is also gratefully acknowledged.",

year = "2006",

doi = "10.1063/1.2164909",

language = "English (US)",

volume = "88",

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T1 - Effect of hydrostatic pressure on the barrier height of Ni Schottky contacts on n-AlGaN

AU - Liu, Y.

AU - Kauser, M. Z.

AU - Ruden, P. P.

AU - Hassan, Z.

AU - Lee, Y. C.

AU - Ng, S. S.

AU - Yam, F. K.

N1 - Funding Information: The authors acknowledge partial support from NSF/ECS and NASA/JPL. Support from a Fulbright grant, CIES, IIE, IRPA RMK-8 Strategic Research grant, University of Minnesota, and Universiti Sains Malaysia is also gratefully acknowledged.

PY - 2006

Y1 - 2006

N2 - We report measurements of the Schottky barrier height of Ni contacts on Ga-polarity n- Al0.08 Ga0.92 N as a function of pressure. With applied hydrostatic pressure, Al0.08 Ga0.92 N Schottky diodes show a decrease in the forward bias current, and correspondingly an increase in the barrier height, which is approximately twice as large as that previously reported for Schottky contacts on Ga-polarity n-GaN. The observed change in barrier height with pressure is attributed to a combination of band structure and piezoelectric effects. The larger change of barrier height for Al0.08 Ga0.92 N can be explained by its larger piezoelectric constants and smaller density of interface states at the metal-semiconductor interface compared to GaN.

AB - We report measurements of the Schottky barrier height of Ni contacts on Ga-polarity n- Al0.08 Ga0.92 N as a function of pressure. With applied hydrostatic pressure, Al0.08 Ga0.92 N Schottky diodes show a decrease in the forward bias current, and correspondingly an increase in the barrier height, which is approximately twice as large as that previously reported for Schottky contacts on Ga-polarity n-GaN. The observed change in barrier height with pressure is attributed to a combination of band structure and piezoelectric effects. The larger change of barrier height for Al0.08 Ga0.92 N can be explained by its larger piezoelectric constants and smaller density of interface states at the metal-semiconductor interface compared to GaN.

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DO - 10.1063/1.2164909

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JF - Applied Physics Letters

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Effect of hydrostatic pressure on the barrier height of Ni Schottky contacts on n-AlGaN

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