Effect of hydrostatic pressure on the barrier height of Ni Schottky contacts on n-AlGaN

Y. Liu, M. Z. Kauser, P. P. Ruden, Z. Hassan, Y. C. Lee, S. S. Ng, F. K. Yam

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27 Scopus citations


We report measurements of the Schottky barrier height of Ni contacts on Ga-polarity n- Al0.08 Ga0.92 N as a function of pressure. With applied hydrostatic pressure, Al0.08 Ga0.92 N Schottky diodes show a decrease in the forward bias current, and correspondingly an increase in the barrier height, which is approximately twice as large as that previously reported for Schottky contacts on Ga-polarity n-GaN. The observed change in barrier height with pressure is attributed to a combination of band structure and piezoelectric effects. The larger change of barrier height for Al0.08 Ga0.92 N can be explained by its larger piezoelectric constants and smaller density of interface states at the metal-semiconductor interface compared to GaN.

Original languageEnglish (US)
Article number022109
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Issue number2
StatePublished - 2006

Bibliographical note

Funding Information:
The authors acknowledge partial support from NSF/ECS and NASA/JPL. Support from a Fulbright grant, CIES, IIE, IRPA RMK-8 Strategic Research grant, University of Minnesota, and Universiti Sains Malaysia is also gratefully acknowledged.


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