Effect of high copper and oxygen concentrations on the optical and electrical properties of (CdTe)xCuyOz films

S. Jiménez-Sandoval; J. Carmona-Rodríguez; R. Lozada-Morales; O. Jiménez-Sandoval; M. Meléndez-Lira; C. I. Zúñiga-Romero; D. Dahlberg

doi:10.1016/j.solmat.2006.02.024

Effect of high copper and oxygen concentrations on the optical and electrical properties of (CdTe)_xCu_yO_z films

S. Jiménez-Sandoval, J. Carmona-Rodríguez, R. Lozada-Morales, O. Jiménez-Sandoval, M. Meléndez-Lira, C. I. Zúñiga-Romero, D. Dahlberg

Physics and Astronomy (Twin Cities)

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Thin films of (CdTe)_xCu_yO_z have been prepared by reactive RF cosputtering using high concentrations of copper and oxygen. The films were grown at 350 °C on glass and Si substrates. Under these conditions samples of amorphous nature were obtained with some clusters of Cu₂O for the larger concentrations of Cu and O used in this work. The largest band gap variation, from 3.5 to 1.4 eV, was obtained for the samples grown with an oxygen flow of 17 standard cubic centimeters per minute (sccm) in the growth chamber. The samples are highly resistive for most cases, but for high Cu concentrations resistivities of the order of 10³ Ω-cm were obtained in the case of films grown with a flow of 15 sccm of oxygen.

Original language	English (US)
Pages (from-to)	2248-2254
Number of pages	7
Journal	Solar Energy Materials and Solar Cells
Volume	90
Issue number	15
DOIs	https://doi.org/10.1016/j.solmat.2006.02.024
State	Published - Sep 22 2006

Bibliographical note

Funding Information:
The technical assistance of F. Rodríguez-Melgarejo, J. Márquez-Marín and J.E. Urbina-Alvarez is greatly acknowledged. The financial support of Conacyt-Mexico under Grant no. SEP 2003 C02-44052 is also acknowledged.

Keywords

Electrical properties
Optical properties
Semiconductors
Solar cells

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Publisher link

10.1016/j.solmat.2006.02.024

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Cite this

Jiménez-Sandoval, S., Carmona-Rodríguez, J., Lozada-Morales, R., Jiménez-Sandoval, O., Meléndez-Lira, M., Zúñiga-Romero, C. I., & Dahlberg, D. (2006). Effect of high copper and oxygen concentrations on the optical and electrical properties of (CdTe)_xCu_yO_z films. Solar Energy Materials and Solar Cells, 90(15), 2248-2254. https://doi.org/10.1016/j.solmat.2006.02.024

Jiménez-Sandoval, S, Carmona-Rodríguez, J, Lozada-Morales, R, Jiménez-Sandoval, O, Meléndez-Lira, M, Zúñiga-Romero, CI & Dahlberg, D 2006, 'Effect of high copper and oxygen concentrations on the optical and electrical properties of (CdTe)_xCu_yO_z films', Solar Energy Materials and Solar Cells, vol. 90, no. 15, pp. 2248-2254. https://doi.org/10.1016/j.solmat.2006.02.024

@article{49917f640d604fc9818d5e46645ea350,

title = "Effect of high copper and oxygen concentrations on the optical and electrical properties of (CdTe)xCuyOz films",

abstract = "Thin films of (CdTe)xCuyOz have been prepared by reactive RF cosputtering using high concentrations of copper and oxygen. The films were grown at 350 °C on glass and Si substrates. Under these conditions samples of amorphous nature were obtained with some clusters of Cu2O for the larger concentrations of Cu and O used in this work. The largest band gap variation, from 3.5 to 1.4 eV, was obtained for the samples grown with an oxygen flow of 17 standard cubic centimeters per minute (sccm) in the growth chamber. The samples are highly resistive for most cases, but for high Cu concentrations resistivities of the order of 103 Ω-cm were obtained in the case of films grown with a flow of 15 sccm of oxygen.",

keywords = "Electrical properties, Optical properties, Semiconductors, Solar cells",

author = "S. Jim{\'e}nez-Sandoval and J. Carmona-Rodr{\'i}guez and R. Lozada-Morales and O. Jim{\'e}nez-Sandoval and M. Mel{\'e}ndez-Lira and Z{\'u}{\~n}iga-Romero, {C. I.} and D. Dahlberg",

note = "Funding Information: The technical assistance of F. Rodr{\'i}guez-Melgarejo, J. M{\'a}rquez-Mar{\'i}n and J.E. Urbina-Alvarez is greatly acknowledged. The financial support of Conacyt-Mexico under Grant no. SEP 2003 C02-44052 is also acknowledged. ",

year = "2006",

month = sep,

day = "22",

doi = "10.1016/j.solmat.2006.02.024",

language = "English (US)",

volume = "90",

pages = "2248--2254",

journal = "Solar Energy Materials and Solar Cells",

issn = "0927-0248",

publisher = "Elsevier B.V.",

number = "15",

}

TY - JOUR

T1 - Effect of high copper and oxygen concentrations on the optical and electrical properties of (CdTe)xCuyOz films

AU - Jiménez-Sandoval, S.

AU - Carmona-Rodríguez, J.

AU - Lozada-Morales, R.

AU - Jiménez-Sandoval, O.

AU - Meléndez-Lira, M.

AU - Zúñiga-Romero, C. I.

AU - Dahlberg, D.

N1 - Funding Information: The technical assistance of F. Rodríguez-Melgarejo, J. Márquez-Marín and J.E. Urbina-Alvarez is greatly acknowledged. The financial support of Conacyt-Mexico under Grant no. SEP 2003 C02-44052 is also acknowledged.

PY - 2006/9/22

Y1 - 2006/9/22

N2 - Thin films of (CdTe)xCuyOz have been prepared by reactive RF cosputtering using high concentrations of copper and oxygen. The films were grown at 350 °C on glass and Si substrates. Under these conditions samples of amorphous nature were obtained with some clusters of Cu2O for the larger concentrations of Cu and O used in this work. The largest band gap variation, from 3.5 to 1.4 eV, was obtained for the samples grown with an oxygen flow of 17 standard cubic centimeters per minute (sccm) in the growth chamber. The samples are highly resistive for most cases, but for high Cu concentrations resistivities of the order of 103 Ω-cm were obtained in the case of films grown with a flow of 15 sccm of oxygen.

AB - Thin films of (CdTe)xCuyOz have been prepared by reactive RF cosputtering using high concentrations of copper and oxygen. The films were grown at 350 °C on glass and Si substrates. Under these conditions samples of amorphous nature were obtained with some clusters of Cu2O for the larger concentrations of Cu and O used in this work. The largest band gap variation, from 3.5 to 1.4 eV, was obtained for the samples grown with an oxygen flow of 17 standard cubic centimeters per minute (sccm) in the growth chamber. The samples are highly resistive for most cases, but for high Cu concentrations resistivities of the order of 103 Ω-cm were obtained in the case of films grown with a flow of 15 sccm of oxygen.

KW - Electrical properties

KW - Optical properties

KW - Semiconductors

KW - Solar cells

UR - http://www.scopus.com/inward/record.url?scp=33745484944&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33745484944&partnerID=8YFLogxK

U2 - 10.1016/j.solmat.2006.02.024

DO - 10.1016/j.solmat.2006.02.024

M3 - Article

AN - SCOPUS:33745484944

SN - 0927-0248

VL - 90

SP - 2248

EP - 2254

JO - Solar Energy Materials and Solar Cells

JF - Solar Energy Materials and Solar Cells

IS - 15

ER -