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Effect of growth temperature on the key properties of aluminum-doped zinc oxide thin films prepared by atomic layer deposition
Emine Güneri,
Bethanie Stadler
Electrical and Computer Engineering
Cellular Mechanisms of Cancer
Research output
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Contribution to journal
›
Article
›
peer-review
6
Scopus citations
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Dive into the research topics of 'Effect of growth temperature on the key properties of aluminum-doped zinc oxide thin films prepared by atomic layer deposition'. Together they form a unique fingerprint.
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Keyphrases
Aluminum Doped Zinc Oxide Films
25%
Aluminum-doped Zinc Oxide
100%
Atomic Layer Deposition
100%
Blue Shift
25%
Crystallinity
25%
Diethylzinc
25%
Energy Band Gap
25%
Grain Size
25%
Growth Temperature
100%
High Purity Water
25%
High Transparency
25%
Low Vacuum
25%
Resistivity
25%
Transmission Window
25%
Trimethylaluminum
25%
Zinc Oxide Thin Films
100%
Material Science
Aluminum
100%
Electrical Resistivity
50%
Film
100%
Grain Size
50%
Oxide Film
50%
Thin Films
100%
Zinc Oxide
100%
Engineering
Aluminium-Doped Zinc Oxide
100%
Atomic Layer Deposition
100%
Band Gap Energy
25%
Crystallinity
25%
Growth Temperature
100%
Oxide Film
25%
Purity Water
25%
Thin Films
100%
Transmissions
25%
Chemical Engineering
Atomic Layer Deposition
100%
Growth Temperature
100%
Zinc Oxide
100%