Effect of growth induced (non)stoichiometry on interfacial conductance in LaAlO3/SrTiO3

E. Breckenfeld, N. Bronn, J. Karthik, A. R. Damodaran, S. Lee, N. Mason, L. W. Martin

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117 Scopus citations


We demonstrate a link between the growth process, the stoichiometry of LaAlO3, and the interfacial electrical properties of LaAlO 3/SrTiO3 heterointerfaces. Varying the relative La:Al cation stoichiometry by a few atomic percent in films grown at 1×10 -3 Torr results in a 2 and 7 order-of-magnitude change in the 300 and 2 K sheet resistance, respectively, with highly conducting states occurring only in La-deficient or Al-excess films. Further reducing the growth pressure results in an increase of the carrier density and a dramatic change in mobility. We discuss the relative contributions of intrinsic and extrinsic effects in controlling the physical properties of this widely studied system.

Original languageEnglish (US)
Article number196804
JournalPhysical review letters
Issue number19
StatePublished - May 9 2013
Externally publishedYes


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