Effect of growth induced (non)stoichiometry on interfacial conductance in LaAlO3/SrTiO3

E. Breckenfeld; N. Bronn; J. Karthik; A. R. Damodaran; S. Lee; N. Mason; L. W. Martin

doi:10.1103/PhysRevLett.110.196804

Effect of growth induced (non)stoichiometry on interfacial conductance in LaAlO₃/SrTiO₃

E. Breckenfeld, N. Bronn, J. Karthik, A. R. Damodaran, S. Lee, N. Mason, L. W. Martin

Research output: Contribution to journal › Article › peer-review

131 Scopus citations

Abstract

We demonstrate a link between the growth process, the stoichiometry of LaAlO₃, and the interfacial electrical properties of LaAlO ₃/SrTiO₃ heterointerfaces. Varying the relative La:Al cation stoichiometry by a few atomic percent in films grown at 1×10 ^-3 Torr results in a 2 and 7 order-of-magnitude change in the 300 and 2 K sheet resistance, respectively, with highly conducting states occurring only in La-deficient or Al-excess films. Further reducing the growth pressure results in an increase of the carrier density and a dramatic change in mobility. We discuss the relative contributions of intrinsic and extrinsic effects in controlling the physical properties of this widely studied system.

Original language	English (US)
Article number	196804
Journal	Physical review letters
Volume	110
Issue number	19
DOIs	https://doi.org/10.1103/PhysRevLett.110.196804
State	Published - May 9 2013
Externally published	Yes

Publisher link

10.1103/PhysRevLett.110.196804

Find It

Find It at U of M Libraries

Cite this

@article{9987bb6c7d514241a91e61c66b969c70,

title = "Effect of growth induced (non)stoichiometry on interfacial conductance in LaAlO3/SrTiO3",

abstract = "We demonstrate a link between the growth process, the stoichiometry of LaAlO3, and the interfacial electrical properties of LaAlO 3/SrTiO3 heterointerfaces. Varying the relative La:Al cation stoichiometry by a few atomic percent in films grown at 1×10 -3 Torr results in a 2 and 7 order-of-magnitude change in the 300 and 2 K sheet resistance, respectively, with highly conducting states occurring only in La-deficient or Al-excess films. Further reducing the growth pressure results in an increase of the carrier density and a dramatic change in mobility. We discuss the relative contributions of intrinsic and extrinsic effects in controlling the physical properties of this widely studied system.",

author = "E. Breckenfeld and N. Bronn and J. Karthik and Damodaran, {A. R.} and S. Lee and N. Mason and Martin, {L. W.}",

year = "2013",

month = may,

day = "9",

doi = "10.1103/PhysRevLett.110.196804",

language = "English (US)",

volume = "110",

journal = "Physical review letters",

issn = "0031-9007",

publisher = "American Physical Society",

number = "19",

}

TY - JOUR

T1 - Effect of growth induced (non)stoichiometry on interfacial conductance in LaAlO3/SrTiO3

AU - Breckenfeld, E.

AU - Bronn, N.

AU - Karthik, J.

AU - Damodaran, A. R.

AU - Lee, S.

AU - Mason, N.

AU - Martin, L. W.

PY - 2013/5/9

Y1 - 2013/5/9

N2 - We demonstrate a link between the growth process, the stoichiometry of LaAlO3, and the interfacial electrical properties of LaAlO 3/SrTiO3 heterointerfaces. Varying the relative La:Al cation stoichiometry by a few atomic percent in films grown at 1×10 -3 Torr results in a 2 and 7 order-of-magnitude change in the 300 and 2 K sheet resistance, respectively, with highly conducting states occurring only in La-deficient or Al-excess films. Further reducing the growth pressure results in an increase of the carrier density and a dramatic change in mobility. We discuss the relative contributions of intrinsic and extrinsic effects in controlling the physical properties of this widely studied system.

AB - We demonstrate a link between the growth process, the stoichiometry of LaAlO3, and the interfacial electrical properties of LaAlO 3/SrTiO3 heterointerfaces. Varying the relative La:Al cation stoichiometry by a few atomic percent in films grown at 1×10 -3 Torr results in a 2 and 7 order-of-magnitude change in the 300 and 2 K sheet resistance, respectively, with highly conducting states occurring only in La-deficient or Al-excess films. Further reducing the growth pressure results in an increase of the carrier density and a dramatic change in mobility. We discuss the relative contributions of intrinsic and extrinsic effects in controlling the physical properties of this widely studied system.

UR - http://www.scopus.com/inward/record.url?scp=84877587811&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84877587811&partnerID=8YFLogxK

U2 - 10.1103/PhysRevLett.110.196804

DO - 10.1103/PhysRevLett.110.196804

M3 - Article

AN - SCOPUS:84877587811

SN - 0031-9007

VL - 110

JO - Physical review letters

JF - Physical review letters

IS - 19

M1 - 196804

ER -

Effect of growth induced (non)stoichiometry on interfacial conductance in LaAlO₃/SrTiO₃

Abstract

Publisher link

Find It

Other files and links

Fingerprint

Cite this