Effect of film thickness on the structural and electrical properties of Ga-dopped ZnO thin films prepared on glass and Al2O3 (0001) substrates by RF magnetron sputtering method

Seung Wook Shin, S. M. Pawar, Tae Won Kim, Jong Ha Moon, Jin Hyeok Kim

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16 Scopus citations

Abstract

Thin films of Ga-doped ZnO (GZO) were prepared on glass and Al2O3 (0001) substrates by using RF magnetron sputtering at a substrate temperature of 350 °C, RF power of 175 W, and working pressure of 6 mTorr. The effect of film thickness and substrate type on the structural and electrical properties of the thin films was investigated. X-ray diffraction study showed that GZO thin films on glass substrates were grown as a polycrystalline hexagonal wurtzite phase with a c-axis preferred, out-of-plane orientation and random in-plane orientation. However, GZO thin films on Al2O3 (0001) substrates were epitaxially grown with an orientation relationship of (00001)[112̄0]GZO (00001) [112̄0]Al2O3. The structural images from scanning electron microscopy and atomic force microscopy showed that the GZO thin films on glass substrates had a rougher surface morphology than those on Al2O3 (0001) substrates. The electrical resistivity of 1000 nm-thick GZO thin films grown on glass and Al2O3 (0001) substrates was 3.04 × 10-4 Ωcm and 1.50 × 10-4 Ω2cm, respectively. It was also found that the electrical resistivity difference between the films on the two substrates decreased from 9.48 × 10-4 Ωcm to 1.45 × 10-4 Ωcm with increasing the film thickness from 100 nm to 1000 nm.

Original languageEnglish (US)
Pages (from-to)441-447
Number of pages7
JournalJournal of Materials Research
Volume24
Issue number2
DOIs
StatePublished - Feb 1 2009

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