Effect of elevated implant temperature on amorphization and activation in as-implanted silicon-on-insulator layers

Katherine L. Saenger, Stephen W. Bedell, Matthew Copel, Amlan Majumdar, John A. Ott, Joel P. De Souza, Steven J. Koester, Donald R. Wall, Devendra K. Sadana

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The ion implantation steps used in fabricating field effect transistors in ultrathin (6 to 30 nm) silicon-on-insulator (UTSOI) substrates present many challenges. Deep source/drain (S/D) implants in UTSOI layers are a particular concern, since it can be difficult to implant the desired dose without amorphizing the entire SOI thickness. In a first study, we investigated the effect of implant temperature (20 to 300 °C) on the sheet resistance (Rs) of 28 nm thick SOI layers implanted with As+ at an energy of 50 keV and a dose of 3 × 1015 /cm2, and found Rs values after activation sharply lower for samples implanted at the highest temperature. In a second study, on 8 nm thick SOI layers implanted with As+ at an energy of 0.75 keV and doses in the range 0.5 to 2 × 1015 /cm5, the benefits of the elevated implantation temperature were less clear. Explanations for these effects, supported by microscopy, medium energy ion scattering (MEIS), and optical reflectance data, will be discussed.

Original languageEnglish (US)
Title of host publicationDoping Engineering for Front-End Processing
PublisherMaterials Research Society
Pages205-210
Number of pages6
ISBN (Print)9781605110400
DOIs
StatePublished - 2008
Event2008 MRS Spring Meeting - San Francisco, CA, United States
Duration: Mar 25 2008Mar 27 2008

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1070
ISSN (Print)0272-9172

Other

Other2008 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period3/25/083/27/08

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