Effect of Doping Profile Variations on the Performance of the Permeable Base Transistor

Anand Gopinath; J. Bruce Rankin

doi:10.1109/T-ED.1986.22574

Effect of Doping Profile Variations on the Performance of the Permeable Base Transistor

Anand Gopinath, J. Bruce Rankin

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The cutoff frequency f_t and maximum frequency of oscillation f_max of the permeable-base transistor have been calculated for devices with a fixed geometry and different doping profiles to determine the profile that gave the highest value of f_max The effect of different static velocity-field curves for GaAs and InP, and associated diffusion-field dependencies on device performance have also been examined. The results of the simulations show that the saturated velocity for GaAs PBT's has a major impact on performance. The uniformly doped device, N_dof 4 x 10¹⁶ cm^-3, has a higher f_max when the saturated velocity is larger, but the effect of the low field mobility is small. The InP device has a slightly higher f_max than the corresponding GaAs devices at this doping level. The 20-10-4 x 10¹⁶cm^-3 devices have the highest f_max of all the GaAs devices investigated.

Original language	English (US)
Pages (from-to)	816-821
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	33
Issue number	6
DOIs	https://doi.org/10.1109/T-ED.1986.22574
State	Published - Jun 1986

Access

10.1109/T-ED.1986.22574

Fingerprint Dive into the research topics of 'Effect of Doping Profile Variations on the Performance of the Permeable Base Transistor'. Together they form a unique fingerprint.

Cite this

@article{e5ee7a2b0554475cb82d4ca0dde99ea3,

title = "Effect of Doping Profile Variations on the Performance of the Permeable Base Transistor",

abstract = "The cutoff frequency ft and maximum frequency of oscillation fmax of the permeable-base transistor have been calculated for devices with a fixed geometry and different doping profiles to determine the profile that gave the highest value of fmax The effect of different static velocity-field curves for GaAs and InP, and associated diffusion-field dependencies on device performance have also been examined. The results of the simulations show that the saturated velocity for GaAs PBT's has a major impact on performance. The uniformly doped device, Ndof 4 x 1016 cm-3, has a higher fmax when the saturated velocity is larger, but the effect of the low field mobility is small. The InP device has a slightly higher fmax than the corresponding GaAs devices at this doping level. The 20-10-4 x 1016cm-3 devices have the highest fmax of all the GaAs devices investigated.",

author = "Anand Gopinath and Rankin, {J. Bruce}",

year = "1986",

month = jun,

doi = "10.1109/T-ED.1986.22574",

language = "English (US)",

volume = "33",

pages = "816--821",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

}

TY - JOUR

T1 - Effect of Doping Profile Variations on the Performance of the Permeable Base Transistor

AU - Gopinath, Anand

AU - Rankin, J. Bruce

PY - 1986/6

Y1 - 1986/6

N2 - The cutoff frequency ft and maximum frequency of oscillation fmax of the permeable-base transistor have been calculated for devices with a fixed geometry and different doping profiles to determine the profile that gave the highest value of fmax The effect of different static velocity-field curves for GaAs and InP, and associated diffusion-field dependencies on device performance have also been examined. The results of the simulations show that the saturated velocity for GaAs PBT's has a major impact on performance. The uniformly doped device, Ndof 4 x 1016 cm-3, has a higher fmax when the saturated velocity is larger, but the effect of the low field mobility is small. The InP device has a slightly higher fmax than the corresponding GaAs devices at this doping level. The 20-10-4 x 1016cm-3 devices have the highest fmax of all the GaAs devices investigated.

AB - The cutoff frequency ft and maximum frequency of oscillation fmax of the permeable-base transistor have been calculated for devices with a fixed geometry and different doping profiles to determine the profile that gave the highest value of fmax The effect of different static velocity-field curves for GaAs and InP, and associated diffusion-field dependencies on device performance have also been examined. The results of the simulations show that the saturated velocity for GaAs PBT's has a major impact on performance. The uniformly doped device, Ndof 4 x 1016 cm-3, has a higher fmax when the saturated velocity is larger, but the effect of the low field mobility is small. The InP device has a slightly higher fmax than the corresponding GaAs devices at this doping level. The 20-10-4 x 1016cm-3 devices have the highest fmax of all the GaAs devices investigated.

UR - http://www.scopus.com/inward/record.url?scp=0022739919&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0022739919&partnerID=8YFLogxK

U2 - 10.1109/T-ED.1986.22574

DO - 10.1109/T-ED.1986.22574

M3 - Article

AN - SCOPUS:0022739919

VL - 33

SP - 816

EP - 821

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 6

ER -