TY - JOUR
T1 - Effect of Doping Profile Variations on the Performance of the Permeable Base Transistor
AU - Gopinath, Anand
AU - Rankin, J. Bruce
PY - 1986/6
Y1 - 1986/6
N2 - The cutoff frequency ft and maximum frequency of oscillation fmax of the permeable-base transistor have been calculated for devices with a fixed geometry and different doping profiles to determine the profile that gave the highest value of fmax The effect of different static velocity-field curves for GaAs and InP, and associated diffusion-field dependencies on device performance have also been examined. The results of the simulations show that the saturated velocity for GaAs PBT's has a major impact on performance. The uniformly doped device, Ndof 4 x 1016 cm-3, has a higher fmax when the saturated velocity is larger, but the effect of the low field mobility is small. The InP device has a slightly higher fmax than the corresponding GaAs devices at this doping level. The 20-10-4 x 1016cm-3 devices have the highest fmax of all the GaAs devices investigated.
AB - The cutoff frequency ft and maximum frequency of oscillation fmax of the permeable-base transistor have been calculated for devices with a fixed geometry and different doping profiles to determine the profile that gave the highest value of fmax The effect of different static velocity-field curves for GaAs and InP, and associated diffusion-field dependencies on device performance have also been examined. The results of the simulations show that the saturated velocity for GaAs PBT's has a major impact on performance. The uniformly doped device, Ndof 4 x 1016 cm-3, has a higher fmax when the saturated velocity is larger, but the effect of the low field mobility is small. The InP device has a slightly higher fmax than the corresponding GaAs devices at this doping level. The 20-10-4 x 1016cm-3 devices have the highest fmax of all the GaAs devices investigated.
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U2 - 10.1109/T-ED.1986.22574
DO - 10.1109/T-ED.1986.22574
M3 - Article
AN - SCOPUS:0022739919
SN - 0018-9383
VL - 33
SP - 816
EP - 821
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
IS - 6
ER -