TY - JOUR
T1 - Effect of different annealing conditions on the properties of chemically deposited ZnS thin films on ITO coated glass substrates
AU - Shin, Seung Wook
AU - Ra Kang, So
AU - Ho Yun, Jae
AU - Moholkar, A. V.
AU - Moon, Jong Ha
AU - Yong Lee, Jeong
AU - Kim, Jin Hyeok
PY - 2011/3/1
Y1 - 2011/3/1
N2 - The effects of different annealing conditions such as atmospheres, temperatures and times on the structural, morphological and optical properties of ZnS thin films prepared on ITO coated glass substrates by chemical bath deposition were studied. Aqueous solutions of zinc acetate and thiourea were used as precursors along with stable complexing agents, such as Na 2EDTA and Na3-citrate, in an alkaline medium. X-ray diffraction patterns showed that the as-deposited and as-annealed ZnS films had an amorphous structure or poor crystallinity below the optimized annealing conditions of 500 °C and 60 min with the exception of the films annealed in N2H2S annealing atmosphere. The ZnS thin films annealed in N2H2S atmosphere for 1 h at 500 °C showed three sharp peaks for the (1 1 1), (2 2 0) and (1 1 3) planes of polycrystalline cubic ZnS without any unwanted secondary ZnO phases. X-ray photoelectron spectroscopy revealed ZnOH and ZnS bonding in the as-deposited ZnS thin film. However, the ZnS thin films annealed at 500 °C showed ZnS bonding regardless of the annealing atmosphere. The sharp absorption edge and band gap energy of the as-deposited and as-annealed ZnS thin films varied from 295 to 310 nm and 3.5 to 3.89 eV, respectively.
AB - The effects of different annealing conditions such as atmospheres, temperatures and times on the structural, morphological and optical properties of ZnS thin films prepared on ITO coated glass substrates by chemical bath deposition were studied. Aqueous solutions of zinc acetate and thiourea were used as precursors along with stable complexing agents, such as Na 2EDTA and Na3-citrate, in an alkaline medium. X-ray diffraction patterns showed that the as-deposited and as-annealed ZnS films had an amorphous structure or poor crystallinity below the optimized annealing conditions of 500 °C and 60 min with the exception of the films annealed in N2H2S annealing atmosphere. The ZnS thin films annealed in N2H2S atmosphere for 1 h at 500 °C showed three sharp peaks for the (1 1 1), (2 2 0) and (1 1 3) planes of polycrystalline cubic ZnS without any unwanted secondary ZnO phases. X-ray photoelectron spectroscopy revealed ZnOH and ZnS bonding in the as-deposited ZnS thin film. However, the ZnS thin films annealed at 500 °C showed ZnS bonding regardless of the annealing atmosphere. The sharp absorption edge and band gap energy of the as-deposited and as-annealed ZnS thin films varied from 295 to 310 nm and 3.5 to 3.89 eV, respectively.
KW - Annealing atmosphere
KW - Annealing temperature
KW - Chemical Bath Deposition (CBD)
KW - Less-toxic complexing agents
KW - Polycrystalline ZnS films
KW - XPS studies
UR - http://www.scopus.com/inward/record.url?scp=78751649639&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=78751649639&partnerID=8YFLogxK
U2 - 10.1016/j.solmat.2010.11.002
DO - 10.1016/j.solmat.2010.11.002
M3 - Article
AN - SCOPUS:78751649639
VL - 95
SP - 856
EP - 863
JO - Solar Energy Materials and Solar Cells
JF - Solar Energy Materials and Solar Cells
SN - 0927-0248
IS - 3
ER -