Effect of deposition chemistry and annealing on charge in HfO₂ stacks

Keyphrases

• Annealing 100%
• Capacitors 33%
• Damage-free 33%
• Film Deposition 33%
• Forming Gas Annealing 33%
• Gate Stack 33%
• HfO2 100%
• HfO2 Films 33%
• Hysteresis 33%
• Interface Charge 33%
• Interface State Density 33%
• Metal-organic Chemical Vapor Deposition (MOCVD) 33%
• NMOS 33%
• Post Deposition 33%
• Residual Defect 33%
• Residual Impurities 33%
• State of Charge 33%

Engineering

• Charge State 100%
• Deposited Film 100%
• Forming Gas Anneal 100%
• Gate Stack 100%
• Interface State 100%
• Metal Organic Chemical Vapor Deposition 100%

Material Science

• Capacitor 33%
• Density 33%
• Film 100%
• Film Deposition 33%
• Metal-Organic Chemical Vapor Deposition 33%