Effect of density on microwave-induced resistance oscillations in back-gated GaAs quantum wells

X. Fu, M. D. Borisov, M. A. Zudov, Q. Qian, J. D. Watson, M. J. Manfra

Research output: Contribution to journalArticlepeer-review

Abstract

We report on microwave-induced resistance oscillations (MIROs) in a tunable-density 30-nm-wide GaAs/AlGaAs quantum well. We find that the MIRO amplitude increases dramatically with carrier density. Our analysis shows that the anticipated increase in the effective microwave power and quantum lifetime with density is not sufficient to explain the observed growth of the amplitude. We further observe that the fundamental oscillation extrema move towards cyclotron resonance with increasing density, which also contradicts theoretical predictions. These findings reveal that the density dependence is not properly captured by existing theories, calling for further studies.

Original languageEnglish (US)
Article number121303
JournalPhysical Review B
Volume98
Issue number12
DOIs
StatePublished - Sep 17 2018

Bibliographical note

Funding Information:
We thank Q. Shi and Q. Ebner for assistance with experiments and M. Sammon for discussions. The work at Minnesota was supported by the NSF Award No. DMR-1309578 (experiments discussed in the main text) and by the U.S. Department of Energy, Office of Science, Basic Energy Sciences, under Award No. ER 46640-SC0002567 (complementary experiments discussed in Supplemental Material). The work at Purdue was supported by the U.S. Department of Energy, Office of Science, Basic Energy Sciences, under Award No. DE-SC0006671.

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