Effect of density on microwave-induced resistance oscillations in back-gated GaAs quantum wells

X. Fu, M. D. Borisov, M. A. Zudov, Q. Qian, J. D. Watson, M. J. Manfra

Research output: Contribution to journalArticle

Abstract

We report on microwave-induced resistance oscillations (MIROs) in a tunable-density 30-nm-wide GaAs/AlGaAs quantum well. We find that the MIRO amplitude increases dramatically with carrier density. Our analysis shows that the anticipated increase in the effective microwave power and quantum lifetime with density is not sufficient to explain the observed growth of the amplitude. We further observe that the fundamental oscillation extrema move towards cyclotron resonance with increasing density, which also contradicts theoretical predictions. These findings reveal that the density dependence is not properly captured by existing theories, calling for further studies.

Original languageEnglish (US)
Article number121303
JournalPhysical Review B
Volume98
Issue number12
DOIs
StatePublished - Sep 17 2018

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Semiconductor quantum wells
Microwaves
quantum wells
microwaves
oscillations
Cyclotron resonance
Carrier concentration
range (extremes)
cyclotron resonance
aluminum gallium arsenides
life (durability)
gallium arsenide
predictions

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Effect of density on microwave-induced resistance oscillations in back-gated GaAs quantum wells. / Fu, X.; Borisov, M. D.; Zudov, M. A.; Qian, Q.; Watson, J. D.; Manfra, M. J.

In: Physical Review B, Vol. 98, No. 12, 121303, 17.09.2018.

Research output: Contribution to journalArticle

Fu, X. ; Borisov, M. D. ; Zudov, M. A. ; Qian, Q. ; Watson, J. D. ; Manfra, M. J. / Effect of density on microwave-induced resistance oscillations in back-gated GaAs quantum wells. In: Physical Review B. 2018 ; Vol. 98, No. 12.
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