Editor's note: “Impurity incorporation in epitaxially laterally overgrown GaN detected by cryogenic photoluminescence microscope with sub-micron spatial resolution” (Journal of Crystal Growth, Volumes 237–239, Part 2, April 2002, Pages 1075-1078) [https://doi.org/10.1016/S0022-0248(01)02139-X]

Jeffrey Derby

doi:10.1016/j.jcrysgro.2024.127599

Editor's note: “Impurity incorporation in epitaxially laterally overgrown GaN detected by cryogenic photoluminescence microscope with sub-micron spatial resolution” (Journal of Crystal Growth, Volumes 237–239, Part 2, April 2002, Pages 1075-1078) [https://doi.org/10.1016/S0022-0248(01)02139-X]

Jeffrey Derby

Research output: Contribution to journal › Comment/debate › peer-review

Original language	English (US)
Article number	127599
Journal	Journal of Crystal Growth
Volume	636
DOIs	https://doi.org/10.1016/j.jcrysgro.2024.127599
State	Published - Jun 15 2024
Externally published	Yes

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10.1016/j.jcrysgro.2024.127599License: CC BY

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Derby, J. (2024). Editor's note: “Impurity incorporation in epitaxially laterally overgrown GaN detected by cryogenic photoluminescence microscope with sub-micron spatial resolution” (Journal of Crystal Growth, Volumes 237–239, Part 2, April 2002, Pages 1075-1078) [https://doi.org/10.1016/S0022-0248(01)02139-X]. Journal of Crystal Growth, 636, Article 127599. https://doi.org/10.1016/j.jcrysgro.2024.127599

Editor's note: “Impurity incorporation in epitaxially laterally overgrown GaN detected by cryogenic photoluminescence microscope with sub-micron spatial resolution” (Journal of Crystal Growth, Volumes 237–239, Part 2, April 2002, Pages 1075-1078) [https://doi.org/10.1016/S0022-0248(01)02139-X]. / Derby, Jeffrey.
In: Journal of Crystal Growth, Vol. 636, 127599, 15.06.2024.

Research output: Contribution to journal › Comment/debate › peer-review

Derby, J 2024, 'Editor's note: “Impurity incorporation in epitaxially laterally overgrown GaN detected by cryogenic photoluminescence microscope with sub-micron spatial resolution” (Journal of Crystal Growth, Volumes 237–239, Part 2, April 2002, Pages 1075-1078) [https://doi.org/10.1016/S0022-0248(01)02139-X]', Journal of Crystal Growth, vol. 636, 127599. https://doi.org/10.1016/j.jcrysgro.2024.127599

Derby J. Editor's note: “Impurity incorporation in epitaxially laterally overgrown GaN detected by cryogenic photoluminescence microscope with sub-micron spatial resolution” (Journal of Crystal Growth, Volumes 237–239, Part 2, April 2002, Pages 1075-1078) [https://doi.org/10.1016/S0022-0248(01)02139-X]. Journal of Crystal Growth. 2024 Jun 15;636:127599. doi: 10.1016/j.jcrysgro.2024.127599

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title = "Editor's note: “Impurity incorporation in epitaxially laterally overgrown GaN detected by cryogenic photoluminescence microscope with sub-micron spatial resolution” (Journal of Crystal Growth, Volumes 237–239, Part 2, April 2002, Pages 1075-1078) [https://doi.org/10.1016/S0022-0248(01)02139-X]",

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