Dysprosium Iron Garnet Thin Films with Perpendicular Magnetic Anisotropy on Silicon

Jackson J. Bauer, Ethan R. Rosenberg, Subhajit Kundu, K. Andre Mkhoyan, Patrick Quarterman, Alexander J. Grutter, Brian J. Kirby, Julie A. Borchers, Caroline A. Ross

Research output: Contribution to journalArticlepeer-review

21 Scopus citations

Abstract

Magnetic insulators, such as the rare-earth iron garnets, are promising materials for energy-efficient spintronic memory and logic devices, and their anisotropy, magnetization, and other properties can be tuned over a wide range through selection of the rare-earth ion. Films are typically grown as epitaxial single crystals on garnet substrates, but integration of these materials with conventional electronic devices requires growth on Si. The growth, magnetic, and spin transport properties of polycrystalline films of dysprosium iron garnet (DyIG) with perpendicular magnetic anisotropy (PMA) on Si substrates and as single crystal films on garnet substrates are reported. PMA originates from magnetoelastic anisotropy and is obtained by controlling the strain state of the film through lattice mismatch or thermal expansion mismatch with the substrates. DyIG/Si exhibits large grain sizes and bulk-like magnetization and compensation temperature. Polarized neutron reflectometry demonstrates a small interfacial nonmagnetic region near the substrate. Spin Hall magnetoresistance measurements conducted on a Pt/DyIG/Si heterostructure demonstrate a large interfacial spin mixing conductance between the Pt and DyIG comparable to other garnet/Pt heterostructures.

Original languageEnglish (US)
Article number1900820
JournalAdvanced Electronic Materials
Volume6
Issue number1
DOIs
StatePublished - Jan 1 2020

Bibliographical note

Funding Information:
The authors acknowledge support of SMART, a Center of nCORE sponsored by SRC and NIST, and NSF DMR 1808190. This work made use of the Shared Experimental Facilities at MIT supported in part by the MRSEC Program of the National Science Foundation under award number DMR ? 1419807. The authors also acknowledge the support of DARPA under award number HR0011834375. STEM analysis was performed in the Characterization Facility of the University of Minnesota, which receives partial support from the NSF through the MRSEC program.

Publisher Copyright:
© 2019 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Keywords

  • magnetic insulators
  • oxides
  • silicon
  • spintronics

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