Dynamical percolation model of conductance fluctuations in hydrogenated amorphous silicon

Lisa M. Lust, J. Kakalios

Research output: Contribution to journalArticlepeer-review

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Abstract

Conductance fluctuations in hydrogenated amorphous silicon (a-Si:H) are simulated using a dynamical model of resistor diffusion on a lattice held at the percolation threshold. A fraction of lattice sites is designated as a trap, such that when a resistor diffuses onto that site it remains localized for a finite period of time. When a distribution of traps based on the defect density of a-Si:H is employed, the conductance fluctuations of the resistor network exhibit 1/f noise interspersed with random telegraph switching noise, as observed in experimental measurements of a-Si:H.

Original languageEnglish (US)
Pages (from-to)2192-2195
Number of pages4
JournalPhysical review letters
Volume75
Issue number11
DOIs
StatePublished - 1995

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