Electrical spin injection from Fe into [Formula presented] quantum well heterostructures is demonstrated in small ([Formula presented]) in-plane magnetic fields. The measurement is sensitive only to the component of the spin that precesses about the internal magnetic field in the semiconductor. This field is much larger than the applied field and depends strongly on the injection current density. Details of the observed hysteresis in the spin injection signal are reproduced in a model that incorporates the magnetocrystalline anisotropy of the epitaxial Fe film, spin relaxation in the semiconductor, and the dynamic polarization of nuclei by the injected spins.
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We acknowledge L. J. Sham and C. Ciuti for helpful discussions. This work was supported by ONR, the DARPA/ONR SPINS program, the University of Minnesota MRSEC (NSF DMR-0212032), and the Institute for Rock Magnetism. A. F. I. and B. D. S. thank 3M for support.