TY - GEN
T1 - Dual-chamber plasma co-deposition of nanoparticles in amorphous silicon thin films
AU - Anderson, C.
AU - Blackwell, C.
AU - Deneen, J.
AU - Carter, C. B.
AU - Kakalios, J.
AU - Kortshagen, U.
PY - 2007
Y1 - 2007
N2 - The production of hydrogenated amorphous silicon films containing silicon nanocrystalline inclusions (a/nc-Si:H) is demonstrated using a new deposition process. Crystalline Si nanoparticles around 5 nm in diameter are generated in a flow-through plasma reactor, and are introduced into a downstream capacitively-coupled plasma enhanced chemical vapor deposition reactor where the particles are "co-deposited" with the amorphous phase of the film. Transmission electron microscopy confirms the presence of crystalline inclusions in these films, as well as providing confirmation that the crystalline particles are indeed produced in the flow-through reactor and not in the capacitive plasma. Electrical measurements indicate an improvement in the dark conductivity of the intrinsic a/nc-Si:H films as the particle concentration is increased, suggesting that the particles have a doping effect on the films charge transport properties.
AB - The production of hydrogenated amorphous silicon films containing silicon nanocrystalline inclusions (a/nc-Si:H) is demonstrated using a new deposition process. Crystalline Si nanoparticles around 5 nm in diameter are generated in a flow-through plasma reactor, and are introduced into a downstream capacitively-coupled plasma enhanced chemical vapor deposition reactor where the particles are "co-deposited" with the amorphous phase of the film. Transmission electron microscopy confirms the presence of crystalline inclusions in these films, as well as providing confirmation that the crystalline particles are indeed produced in the flow-through reactor and not in the capacitive plasma. Electrical measurements indicate an improvement in the dark conductivity of the intrinsic a/nc-Si:H films as the particle concentration is increased, suggesting that the particles have a doping effect on the films charge transport properties.
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M3 - Conference contribution
AN - SCOPUS:34249940999
SN - 1558998667
SN - 9781558998667
T3 - Materials Research Society Symposium Proceedings
SP - 79
EP - 84
BT - Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2006
T2 - 2006 MRS Spring Meeting
Y2 - 17 April 2006 through 21 April 2006
ER -