Dry thermal oxidation of a graded SiGe layer

Y. S. Lim; J. S. Jeong; J. Y. Lee; H. S. Kim; H. K. Shon; H. K. Kim; D. W. Moon

doi:10.1063/1.1415373

Dry thermal oxidation of a graded SiGe layer

Y. S. Lim
, J. S. Jeong
, J. Y. Lee
, H. S. Kim
, H. K. Shon
, H. K. Kim
, D. W. Moon

Chemical Engineering and Materials Science

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Original language	English (US)
Pages (from-to)	3606
Number of pages	1
Journal	Applied Physics Letters
Volume	79
Issue number	22
DOIs	https://doi.org/10.1063/1.1415373
State	Published - Nov 26 2001

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@article{c0c936850d61424585135048058a2839,

title = "Dry thermal oxidation of a graded SiGe layer",

author = "Lim, \{Y. S.\} and Jeong, \{J. S.\} and Lee, \{J. Y.\} and Kim, \{H. S.\} and Shon, \{H. K.\} and Kim, \{H. K.\} and Moon, \{D. W.\}",

year = "2001",

month = nov,

day = "26",

doi = "10.1063/1.1415373",

language = "English (US)",

volume = "79",

pages = "3606",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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TY - JOUR

T1 - Dry thermal oxidation of a graded SiGe layer

AU - Lim, Y. S.

AU - Jeong, J. S.

AU - Lee, J. Y.

AU - Kim, H. S.

AU - Shon, H. K.

AU - Kim, H. K.

AU - Moon, D. W.

PY - 2001/11/26

Y1 - 2001/11/26

UR - https://www.scopus.com/pages/publications/0035956159

UR - https://www.scopus.com/pages/publications/0035956159#tab=citedBy

U2 - 10.1063/1.1415373

DO - 10.1063/1.1415373

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SN - 0003-6951

VL - 79

SP - 3606

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

ER -

Dry thermal oxidation of a graded SiGe layer

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