Amorphous semiconductor doping superlattices consisting of alternating layers of n-type and p-type doped r. f. glow discharge deposited hydrogenated silicon have been prepared using a closed two-chamber system. After very brief light exposure large excess conductivities are observed that persisted for many days but could be removed by annealing above 450 degree K. These are explained in terms of Dohler's model of charge separation by the internal fields. The photoluminescence peak of the npnp. . . . films is blue-shifted with respect to the peak positions of the n-type and p-type films.