DOPING MODULATED AMORPHOUS SEMICONDUCTORS.

J. Kakalios, H. Fritzche, K. L. Narasimhan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Scopus citations

Abstract

Amorphous semiconductor doping superlattices consisting of alternating layers of n-type and p-type doped r. f. glow discharge deposited hydrogenated silicon have been prepared using a closed two-chamber system. After very brief light exposure large excess conductivities are observed that persisted for many days but could be removed by annealing above 450 degree K. These are explained in terms of Dohler's model of charge separation by the internal fields. The photoluminescence peak of the npnp. . . . films is blue-shifted with respect to the peak positions of the n-type and p-type films.

Original languageEnglish (US)
Title of host publicationAIP Conference Proceedings
PublisherAIP
Pages425-432
Number of pages8
Edition120
ISBN (Print)0883183196, 9780883183199
DOIs
StatePublished - Jan 1 1984

Publication series

NameAIP Conference Proceedings
Number120
ISSN (Print)0094-243X

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  • Cite this

    Kakalios, J., Fritzche, H., & Narasimhan, K. L. (1984). DOPING MODULATED AMORPHOUS SEMICONDUCTORS. In AIP Conference Proceedings (120 ed., pp. 425-432). (AIP Conference Proceedings; No. 120). AIP. https://doi.org/10.1063/1.34774