TY - GEN
T1 - Doping effects in co-deposited mixed phase films of hydrogenated amorphous silicon containing nanocrystalline inclusions
AU - Blackwell, C.
AU - Pi, Xiaodong
AU - Kortshagen, U.
AU - Kakalios, J.
PY - 2008
Y1 - 2008
N2 - Hydrogenated amorphous silicon films containing silicon nanocrystalline inclusions (a/nc-Si:H) that have been n-type doped have been synthesized using a dual-plasma co-deposition system. We report the structural and electronic properties of n-type doped a/nc-Si:H as a function of phosphine doping level and nanocrystalline concentration. The volume fraction of nanocrystals in the doped a/nc-Si:H thin films is measured using Raman spectroscopy, and the hydrogen binding configurations are characterized using infra-red absorption spectroscopy. In undoped a/nc-Si:H, the inclusion of low and moderate nanocrystalline concentrations results in an increase in the dark conductivity, compared to a-Si:H films grown without nanocrystalline inclusions. In contrast, the addition of even a low concentration of silicon nanoparticles in doped a/nc-Si:H thin films leads to a decrease in the dark conductivity and photoconductivity, compared to pure a-Si:H films.
AB - Hydrogenated amorphous silicon films containing silicon nanocrystalline inclusions (a/nc-Si:H) that have been n-type doped have been synthesized using a dual-plasma co-deposition system. We report the structural and electronic properties of n-type doped a/nc-Si:H as a function of phosphine doping level and nanocrystalline concentration. The volume fraction of nanocrystals in the doped a/nc-Si:H thin films is measured using Raman spectroscopy, and the hydrogen binding configurations are characterized using infra-red absorption spectroscopy. In undoped a/nc-Si:H, the inclusion of low and moderate nanocrystalline concentrations results in an increase in the dark conductivity, compared to a-Si:H films grown without nanocrystalline inclusions. In contrast, the addition of even a low concentration of silicon nanoparticles in doped a/nc-Si:H thin films leads to a decrease in the dark conductivity and photoconductivity, compared to pure a-Si:H films.
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U2 - 10.1557/proc-1066-a06-08
DO - 10.1557/proc-1066-a06-08
M3 - Conference contribution
AN - SCOPUS:62949209026
SN - 9781605110363
T3 - Materials Research Society Symposium Proceedings
SP - 155
EP - 160
BT - Amorphous and Polycrystalline Thin-Film Silicon Science and Technology - 2008
PB - Materials Research Society
T2 - 2008 MRS Spring Meeting
Y2 - 25 March 2008 through 27 March 2008
ER -