Dopant solubility and charge compensation in La-doped SrSnO
              3
              films

Tristan Truttmann; Abhinav Prakash; Jin Yue; Thomas E. Mates; Bharat Jalan

doi:10.1063/1.5119272

Dopant solubility and charge compensation in La-doped SrSnO 3 films

Tristan Truttmann, Abhinav Prakash, Jin Yue, Thomas E. Mates, Bharat Jalan

Research output: Contribution to journal › Article › peer-review

26 Scopus citations

Abstract

We investigate lanthanum (La) as an n-type dopant in the strain-stabilized tetragonal phase of SrSnO ₃ grown on GdScO ₃ (110) using a radical-based hybrid molecular beam epitaxy approach. Fully coherent, epitaxial films with an atomically smooth film surface were obtained irrespective of doping density. By combining secondary ion mass spectroscopy and Hall measurements, we demonstrate that each La atom contributes one free electron to the film, confirming that it occupies the Sr site in SrSnO ₃ and that it is completely activated. Carrier density exceeding 1 × 10 ²⁰ cm ^-3 was achieved in La-doped SrSnO ₃ films, which is in excellent agreement with the dopant-solubility limit predicted by density functional theory calculations. A record-high room-temperature mobility of 70 cm ² V ^-1 s ^-1 at 1 × 10 ²⁰ cm ^-3 was obtained in a 12 nm La-doped SrSnO ₃ film, making this the thinnest perovskite oxide semiconductor with electron mobility exceeding 25 cm ² V ^-1 s ^-1 at room temperature. We discuss the structure-dopant-transport property relationships, providing essential knowledge for the design of electronic devices using these materials.

Original language	English (US)
Article number	152103
Pages (from-to)	152103
Journal	Applied Physics Letters
Volume	115
Issue number	15
DOIs	https://doi.org/10.1063/1.5119272
State	Published - Oct 7 2019

Bibliographical note

Funding Information:
This work was supported through the Young Investigator Program of the Air Force Office of Scientific Research (AFOSR) through Grant Nos. FA9550-16-1-0205 and FA9550-19-1-0245. Part of this work was supported by the National Science Foundation through DMR-1741801 and partially by the UMN MRSEC program under Award No. DMR-1420013. Parts of this work were carried out in the Characterization Facility, University of Minnesota, which receives partial support from NSF through the MRSEC program. We also acknowledge partial support from the renewable development funds (RDF) of the Institute on the Environment (UMN) and the Norwegian Centennial Chair Program seed funds.

Publisher Copyright:
© 2019 Author(s).

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10.1063/1.5119272

http://aip.scitation.org/doi/10.1063/1.5119272

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MRSEC IRG-1: Electrostatic Control of Materials
Leighton, C. (Coordinator), Birol, T. (Senior Investigator), Fernandes, R. M. (Senior Investigator), Frisbie, D. (Senior Investigator), Goldman, A. M. (Senior Investigator), Greven, M. (Senior Investigator), Jalan, B. (Senior Investigator), Koester, S. J. (Senior Investigator), He, T. (Researcher), Jeong, J. S. (Researcher), Koirala, S. (Researcher), Paul, A. (Researcher), Thoutam, L. R. (Researcher) & Yu, G. (Researcher)
11/1/14 → 10/31/20
Project: Research project
University of Minnesota MRSEC (DMR-1420013)
Lodge, T. P. (PI)
11/1/14 → 10/31/20
Project: Research project

Cite this

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title = "Dopant solubility and charge compensation in La-doped SrSnO 3 films",

abstract = "We investigate lanthanum (La) as an n-type dopant in the strain-stabilized tetragonal phase of SrSnO 3 grown on GdScO 3 (110) using a radical-based hybrid molecular beam epitaxy approach. Fully coherent, epitaxial films with an atomically smooth film surface were obtained irrespective of doping density. By combining secondary ion mass spectroscopy and Hall measurements, we demonstrate that each La atom contributes one free electron to the film, confirming that it occupies the Sr site in SrSnO 3 and that it is completely activated. Carrier density exceeding 1 × 10 20 cm -3 was achieved in La-doped SrSnO 3 films, which is in excellent agreement with the dopant-solubility limit predicted by density functional theory calculations. A record-high room-temperature mobility of 70 cm 2 V -1 s -1 at 1 × 10 20 cm -3 was obtained in a 12 nm La-doped SrSnO 3 film, making this the thinnest perovskite oxide semiconductor with electron mobility exceeding 25 cm 2 V -1 s -1 at room temperature. We discuss the structure-dopant-transport property relationships, providing essential knowledge for the design of electronic devices using these materials. ",

author = "Tristan Truttmann and Abhinav Prakash and Jin Yue and Mates, {Thomas E.} and Bharat Jalan",

note = "Funding Information: This work was supported through the Young Investigator Program of the Air Force Office of Scientific Research (AFOSR) through Grant Nos. FA9550-16-1-0205 and FA9550-19-1-0245. Part of this work was supported by the National Science Foundation through DMR-1741801 and partially by the UMN MRSEC program under Award No. DMR-1420013. Parts of this work were carried out in the Characterization Facility, University of Minnesota, which receives partial support from NSF through the MRSEC program. We also acknowledge partial support from the renewable development funds (RDF) of the Institute on the Environment (UMN) and the Norwegian Centennial Chair Program seed funds. Publisher Copyright: {\textcopyright} 2019 Author(s).",

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doi = "10.1063/1.5119272",

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AU - Truttmann, Tristan

AU - Prakash, Abhinav

AU - Yue, Jin

AU - Mates, Thomas E.

AU - Jalan, Bharat

N1 - Funding Information: This work was supported through the Young Investigator Program of the Air Force Office of Scientific Research (AFOSR) through Grant Nos. FA9550-16-1-0205 and FA9550-19-1-0245. Part of this work was supported by the National Science Foundation through DMR-1741801 and partially by the UMN MRSEC program under Award No. DMR-1420013. Parts of this work were carried out in the Characterization Facility, University of Minnesota, which receives partial support from NSF through the MRSEC program. We also acknowledge partial support from the renewable development funds (RDF) of the Institute on the Environment (UMN) and the Norwegian Centennial Chair Program seed funds. Publisher Copyright: © 2019 Author(s).

PY - 2019/10/7

Y1 - 2019/10/7

N2 - We investigate lanthanum (La) as an n-type dopant in the strain-stabilized tetragonal phase of SrSnO 3 grown on GdScO 3 (110) using a radical-based hybrid molecular beam epitaxy approach. Fully coherent, epitaxial films with an atomically smooth film surface were obtained irrespective of doping density. By combining secondary ion mass spectroscopy and Hall measurements, we demonstrate that each La atom contributes one free electron to the film, confirming that it occupies the Sr site in SrSnO 3 and that it is completely activated. Carrier density exceeding 1 × 10 20 cm -3 was achieved in La-doped SrSnO 3 films, which is in excellent agreement with the dopant-solubility limit predicted by density functional theory calculations. A record-high room-temperature mobility of 70 cm 2 V -1 s -1 at 1 × 10 20 cm -3 was obtained in a 12 nm La-doped SrSnO 3 film, making this the thinnest perovskite oxide semiconductor with electron mobility exceeding 25 cm 2 V -1 s -1 at room temperature. We discuss the structure-dopant-transport property relationships, providing essential knowledge for the design of electronic devices using these materials.

AB - We investigate lanthanum (La) as an n-type dopant in the strain-stabilized tetragonal phase of SrSnO 3 grown on GdScO 3 (110) using a radical-based hybrid molecular beam epitaxy approach. Fully coherent, epitaxial films with an atomically smooth film surface were obtained irrespective of doping density. By combining secondary ion mass spectroscopy and Hall measurements, we demonstrate that each La atom contributes one free electron to the film, confirming that it occupies the Sr site in SrSnO 3 and that it is completely activated. Carrier density exceeding 1 × 10 20 cm -3 was achieved in La-doped SrSnO 3 films, which is in excellent agreement with the dopant-solubility limit predicted by density functional theory calculations. A record-high room-temperature mobility of 70 cm 2 V -1 s -1 at 1 × 10 20 cm -3 was obtained in a 12 nm La-doped SrSnO 3 film, making this the thinnest perovskite oxide semiconductor with electron mobility exceeding 25 cm 2 V -1 s -1 at room temperature. We discuss the structure-dopant-transport property relationships, providing essential knowledge for the design of electronic devices using these materials.

U2 - 10.1063/1.5119272

DO - 10.1063/1.5119272

M3 - Article

SN - 0003-6951

VL - 115

SP - 152103

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

M1 - 152103

ER -

Dopant solubility and charge compensation in La-doped SrSnO 3 films

Abstract

Bibliographical note

MRSEC Support

UN SDGs

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Projects

MRSEC IRG-1: Electrostatic Control of Materials

University of Minnesota MRSEC (DMR-1420013)

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