Disorder from the Bulk Ionic Liquid in Electric Double Layer Transistors

Trevor A. Petach, Konstantin V. Reich, Xiao Zhang, Kenji Watanabe, Takashi Taniguchi, Boris I. Shklovskii, David Goldhaber-Gordon

Research output: Contribution to journalArticlepeer-review

20 Scopus citations

Abstract

Ionic liquid gating has a number of advantages over solid-state gating, especially for flexible or transparent devices and for applications requiring high carrier densities. However, the large number of charged ions near the channel inevitably results in Coulomb scattering, which limits the carrier mobility in otherwise clean systems. We develop a model for this Coulomb scattering. We validate our model experimentally using ionic liquid gating of graphene across varying thicknesses of hexagonal boron nitride, demonstrating that disorder in the bulk ionic liquid often dominates the scattering.

Original languageEnglish (US)
Pages (from-to)8395-8400
Number of pages6
JournalACS nano
Volume11
Issue number8
DOIs
StatePublished - Aug 22 2017

Bibliographical note

Funding Information:
We thank Shu Hu and Nathan Lewis for providing valuable insight and lab assistance to develop the reference electrode used in this work. The experimental measurements and fabrication of final devices were supported by the Department of Energy, Laboratory Directed Research and Development funding, under contract DE-AC02-76SF00515. Development of the fabrication techniques and some characterization were supported by the Air Force Office of Scientific Research, under contract FA9550-16-1-0126. The theoretical work was supported by the National Science Foundation through the University of Minnesota MRSEC under Award Number DMR-1420013. Part of this work was performed at the Stanford Nano Shared Facilities, supported by the National Science Foundation under award ECCS-1542152. T.P. was supported by the Department of Defense through a National Defense Science and Engineering Graduate Fellowship and by a William R. and Sara Hart Kimball Stanford Graduate Fellowship. K.V.R. was supported by the Russian Science Foundation under grant 17-72-10072. K.W. and T.T. acknowledge support from the Elemental Strategy Initiative conducted by MEXT, Japan, and JSPS KAKENHI Grant Number JP15K21722.

Keywords

  • boron nitride
  • electronic transport
  • field-effect transistor
  • graphene
  • ionic liquid

How much support was provided by MRSEC?

  • Primary

Reporting period for MRSEC

  • Period 4

PubMed: MeSH publication types

  • Journal Article
  • Research Support, Non-U.S. Gov't
  • Research Support, U.S. Gov't, Non-P.H.S.

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