Disorder from the Bulk Ionic Liquid in Electric Double Layer Transistors

Trevor A. Petach; Konstantin V. Reich; Xiao Zhang; Kenji Watanabe; Takashi Taniguchi; Boris I. Shklovskii; David Goldhaber-Gordon

doi:10.1021/acsnano.7b03864

Disorder from the Bulk Ionic Liquid in Electric Double Layer Transistors

Trevor A. Petach, Konstantin V. Reich, Xiao Zhang, Kenji Watanabe, Takashi Taniguchi, Boris I. Shklovskii, David Goldhaber-Gordon

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27 Scopus citations

Abstract

Ionic liquid gating has a number of advantages over solid-state gating, especially for flexible or transparent devices and for applications requiring high carrier densities. However, the large number of charged ions near the channel inevitably results in Coulomb scattering, which limits the carrier mobility in otherwise clean systems. We develop a model for this Coulomb scattering. We validate our model experimentally using ionic liquid gating of graphene across varying thicknesses of hexagonal boron nitride, demonstrating that disorder in the bulk ionic liquid often dominates the scattering.

Original language	English (US)
Pages (from-to)	8395-8400
Number of pages	6
Journal	ACS nano
Volume	11
Issue number	8
DOIs	https://doi.org/10.1021/acsnano.7b03864
State	Published - Aug 22 2017

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Publisher Copyright:
© 2017 American Chemical Society.

Keywords

boron nitride
electronic transport
field-effect transistor
graphene
ionic liquid

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AU - Reich, Konstantin V.

AU - Zhang, Xiao

AU - Watanabe, Kenji

AU - Taniguchi, Takashi

AU - Shklovskii, Boris I.

AU - Goldhaber-Gordon, David

PY - 2017/8/22

Y1 - 2017/8/22

N2 - Ionic liquid gating has a number of advantages over solid-state gating, especially for flexible or transparent devices and for applications requiring high carrier densities. However, the large number of charged ions near the channel inevitably results in Coulomb scattering, which limits the carrier mobility in otherwise clean systems. We develop a model for this Coulomb scattering. We validate our model experimentally using ionic liquid gating of graphene across varying thicknesses of hexagonal boron nitride, demonstrating that disorder in the bulk ionic liquid often dominates the scattering.

AB - Ionic liquid gating has a number of advantages over solid-state gating, especially for flexible or transparent devices and for applications requiring high carrier densities. However, the large number of charged ions near the channel inevitably results in Coulomb scattering, which limits the carrier mobility in otherwise clean systems. We develop a model for this Coulomb scattering. We validate our model experimentally using ionic liquid gating of graphene across varying thicknesses of hexagonal boron nitride, demonstrating that disorder in the bulk ionic liquid often dominates the scattering.

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KW - electronic transport

KW - field-effect transistor

KW - graphene

KW - ionic liquid

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Disorder from the Bulk Ionic Liquid in Electric Double Layer Transistors

Abstract

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Keywords

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Disorder from the Bulk Ionic Liquid in Electric Double Layer Transistors

Abstract

Bibliographical note

Keywords

MRSEC Support

PubMed: MeSH publication types

Publisher link

Find It

Other files and links

Fingerprint

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University of Minnesota MRSEC (DMR-1420013)

MRSEC IRG-2: Sustainable Nanocrystal Materials

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